Abstract
We present numerical results for GaAs/AlGaAs double-barrier resonant tunneling heterostructure devices. A particular emphasis is given to the influence of quantum well thickness and number of quantum well layers on current-voltage characteristic and carrier density profile. In the paper, we discuss results obtained for spatial dependencies of carrier densities, the peak and the valley current density, and corresponding potentials in N-shaped current-voltage characteristics for various resonant tunneling heterostructures. Results are based on the transient quantum drift-diffusion model. They are obtained by solving a coupled system of partial differential equations directly and, in contrast to previous analysis, no decoupling algorithms, procedures, or methods are used.
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Radulovic, N., Willatzen, M., Melnik, R.V.N. (2004). Resonant Tunneling Heterostructure Devices – Dependencies on Thickness and Number of Quantum Wells. In: Laganá, A., Gavrilova, M.L., Kumar, V., Mun, Y., Tan, C.J.K., Gervasi, O. (eds) Computational Science and Its Applications – ICCSA 2004. ICCSA 2004. Lecture Notes in Computer Science, vol 3045. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-24767-8_86
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DOI: https://doi.org/10.1007/978-3-540-24767-8_86
Publisher Name: Springer, Berlin, Heidelberg
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