Abstract
The unusual behavior of the lowest quantum-number j=0 Landau levels of the electrons in Bi has important consequences for the description of a magnetic field-induced semimetal-semiconductor transition. We discuss a quantitative treatment of the j=0 Landau levels, based upon the Baraff Hamiltonian, and including the kH-dependence. Magnetoreflection experiments over a range of photon energies on Bi, Bi98Sb2 and Bi97Sb3 for \(\overrightarrow H \) || binary axis provide experimental confirmation for the model. For large H, the kH-dependence of the j=0 levels is anomalous, showing a “camel-back” shape. As the j=0 conduction band level at kH=O crosses EF, magnetic field-induced carrier pockets are formed away from kH=0. The implications of these magnetic field-induced pockets on a semimetal-semiconductor transition are discussed.
Work supported by the National Science Foundation
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© 1974 Springer Fachmedien Wiesbaden
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Vecchi, M.P., Pereira, J.R., Dresselhaus, M.S. (1974). Magnetic Field-Induced Semimetal-Semiconductor Transition in Bi. In: Pilkuhn, M.H. (eds) Proceedings of the Twelfth International Conference on the Physics of Semiconductors. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-322-94774-1_205
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DOI: https://doi.org/10.1007/978-3-322-94774-1_205
Publisher Name: Vieweg+Teubner Verlag, Wiesbaden
Print ISBN: 978-3-519-03013-3
Online ISBN: 978-3-322-94774-1
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