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Improved Extraction of Photo-Generated Carriers in InGaN MQWSC: Effect of Staggered Quantum Wells with Triple Indium Content

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The Physics of Semiconductor Devices (IWPSD 2017)

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 215))

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Abstract

The use of three different indium (In) compositions in InxGa1−xN quantum wells (QWs) with staggered geometry is proposed to improve the photovoltaic properties of InGaN/GaN multiple quantum well solar cell (MQWSC). Improved lattice matching at the last QW and p-GaN interface along with staggered QWs leads to an increase in short circuit current density, resulting in an overall 45% enhancement in efficiency as compared to reference cell. The optimized MQWSC with staggered QWs solar cell shows a fill factor (FF) of 0.68 and efficiency of 1.21% under AM1.5G illumination.

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Acknowledgements

This work has been supported by the Council of Scientific and Industrial Research (CSIR) through the PSC-109 network programme. Authors are thankful to the Director, CSIR–CEERI for his support and all members of Opto & MOEMS group, CSIR–CEERI for their cooperation.

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Authors and Affiliations

  1. Department of Electronic Science, University of Delhi, South Campus, New Delhi, 110021, India

    Basant Saini, Sugandha Sharma & Avinashi Kapoor

  2. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, 110078, India

    Ravinder Kaur

  3. Optoelectronics & MOEMS Group, CSIR-CEERI, Pilani, 333031, Rajasthan, India

    Suchandan Pal

Authors
  1. Basant Saini
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  2. Sugandha Sharma
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  3. Ravinder Kaur
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  4. Suchandan Pal
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  5. Avinashi Kapoor
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Corresponding author

Correspondence to Basant Saini .

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Editors and Affiliations

  1. Solid State Physics Laboratory, Delhi, India

    R. K. Sharma

  2. Solid State Physics Laboratory, Delhi, India

    D.S. Rawal

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Saini, B., Sharma, S., Kaur, R., Pal, S., Kapoor, A. (2019). Improved Extraction of Photo-Generated Carriers in InGaN MQWSC: Effect of Staggered Quantum Wells with Triple Indium Content. In: Sharma, R., Rawal, D. (eds) The Physics of Semiconductor Devices. IWPSD 2017. Springer Proceedings in Physics, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-97604-4_73

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