Abstract
Optical spectroscopy is studied when a periodic external perturbation, such as an electromagnetic field, temperature, and static pressure or uniaxial stress, is applied to the semiconductor during the process of experimental measurement. The modulation spectroscopy, i.e., the change of the optical spectrum produced by the external perturbation, rather than the absolute spectrum itself, reveals many fine structures in the electronic energy diagram of the semiconductor.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Y. Fu, K.A. Chao, Validity of the third-derivative modulation spectroscopy. Phys. Rev. B 40, 10712–10716 (1989)
D.E. Aspnes, P. Handler, D.F. Blossey, Interband dielectric properties of solids in an electric field. Phys. Rev. 166, 921–933 (1968)
D.E. Aspnes, Direct verification of the third-derivative nature of electroreflectance spectra. Phys. Rev. Lett. 28, 168–71 (1972)
B.O. Seraphin, N. Bottka, Band-structure analysis from electro-reflectance studies. Phys. Rev. 145, 628–36 (1966)
I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89, 5815–5875 (2001)
J. Shao, F. Yue, X. Lü, W. Lu, W. Huang, Z. Li, S. Guo, J. Chu, Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer. Appl. Phys. Lett. 89, 182121(3) (2006)
J. Shao, L. Chen, X. Lü, W. Lu, L. He, S. Guo, J. Chu, Realization of photoreflectance spectroscopy in very-long wave infrared of up to 20 \(\upmu \)m. Appl. Phys. Lett. 95, 041908(3) (2009)
L. Ma, J. Shao, X. Lü, S. Guo, W. Lu, Spectral resolution effects on the lineshape of photoreflectance. Chin. Phys. Lett. 28, 047801(4) (2011)
S. Gopalan, P. Lautenschlager, M. Cardona, Temperature dependence of the shifts and broadenings of the critical points in GaAs. Phys. Rev. B 35, 5577–5584 (1987)
P. Enders, A. Bärwolff, M. Woerner, D. Suisky, k\(\cdot \)p theory of energy bands, wave functions, and optical selection rules in strained tetrahedral semiconductors. Phys. Rev. B 51, 16695–16704 (1995)
T.B. Bahder, Eight-band \(k\cdot p\) model of strained zinc-blende crystals. Phys. Rev. B 41, 11992–12001 (1990)
M. Chandrasekhar, F.H. Pollak, Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs. Phys. Rev. B 15, 2127–2144 (1977)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2018 Springer International Publishing AG, part of Springer Nature
About this chapter
Cite this chapter
Lu, W., Fu, Y. (2018). Modulation Spectroscopy. In: Spectroscopy of Semiconductors. Springer Series in Optical Sciences, vol 215. Springer, Cham. https://doi.org/10.1007/978-3-319-94953-6_5
Download citation
DOI: https://doi.org/10.1007/978-3-319-94953-6_5
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-94952-9
Online ISBN: 978-3-319-94953-6
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)