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Packaging of Power Devices

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References

  1. Amro, R., Lutz, J., Rudzki, J., Thoben, M., Lindemann, A.: Double-sided low-temperature joining technique for power cycling capability at high temperature. In: Proceedings of EPE, Dresden (2005)

    Google Scholar 

  2. Amro, R., Lutz, J., Rudzki, J., Sittig, R., Thoben, M.: Power cycling at high temperature swings of modules with low temperature joining technique. In: Proceedings of ISPSD, pp. 1–4, Naples (2006)

    Google Scholar 

  3. Becker, M.: Neue Technologien für hochzuverlässige Aufbau- und Verbindungstechniken leistungselektronischer Bauteile. PhD-Thesis, Chemnitz (2015)

    Google Scholar 

  4. Beckedahl, P., Hermann, M., Kind, M., Knebel, M., Nascimento, J., Wintrich, A.: Performance comparison of traditional packaging technologies to a novel bond wire less all sintered power module. In: Proceedings of PCIM Europe, pp. 247–252, Nuremberg (2011)

    Google Scholar 

  5. Beckedahl, P., Buetow, S., Maul, A., Roeblitz, M., Spang, M.: 400 A, 1200 V SiC power module with 1nH commutation inductance. In: Proceedings of CIPS, pp. 365–370, Nuremberg (2016)

    Google Scholar 

  6. Borghoff, G.: Implementation of low inductive strip line concept for symmetric switching in a new high power module. In: Proceedings of PCIM Europe, pp. 185–191, Nuremberg (2013)

    Google Scholar 

  7. Butron Ccoa, J.A., Strauß, B., Mitic, G., Lindemann, A.: Investigation of temperature sensitive electrical parameters for power semiconductors (IGBT) in real-time applications. In: Proceedings of PCIM Europe, pp. 456–464, Nuremberg (2014)

    Google Scholar 

  8. Dalin, J., Knauber, A., Reiter, R., Wesling, V., Wilde, J.: Novel aluminium/copper fiber-reinforced bonding wires for power electronics. In: Proceedings of Electronics System integration Technology Conference (ESTC), pp. 1274–1278, Dresden (2006)

    Google Scholar 

  9. Dupont, L., Lefebvre, S., Khatir, Z., Bontemps, S.: Evaluation of substrate technologies under high temperature cycling. In: Proceedings of CIPS, pp. 63–68, Naples (2006)

    Google Scholar 

  10. eFunda engineering fundamentals, http://www.efunda.com/materials/

  11. Electrovac/Curamik: ZrO2 doped alumina DBC substrates – Cur HPS, Datenblatt, unreleased draft (2009)

    Google Scholar 

  12. Feix, G., Hoene, E., Zeiter, O., Pedersen, K.: Embedded very fast switching module for SiC power MOSFETs. In: Proceedings of PCIM Europe, pp. 104–110, Nuremberg (2015)

    Google Scholar 

  13. Felsl, H.P.: Silizium-und SiC-Leistungsdioden unter besonderer Berücksichtigung von elektrisch-thermischen Kopplungseffekten und nichtlinearer Dynamik. PhD-Thesis, Chemnitz (2009)

    Google Scholar 

  14. Goetz, M., Lehmeier, B., Kuhn, N., Meyer, A.: Silicon nitride substrates for power electronics. In: Proceedings of PCIM Europe, pp. 672–679, Nuremberg (2012)

    Google Scholar 

  15. Gutsmann, B., Silber, D., Mourick, P.: Kolloquium Halbleiter-Leistungsbauelemente und ihre systemtechnische Integration, Freiburg (2001)

    Google Scholar 

  16. Guth, K., Siepe, D., Görlich, J., Torwesten, H., Roth, R., Hille, F., Umbach, F.: New assembly and interconnects beyond sintering methods. In: Proceedings of PCIM Europe, pp. 232–237, Nuremberg (2010)

    Google Scholar 

  17. Guth, K., Oeschler, N., Boewer, L., Speckels, R., Strotmann, G., Heuck, N., Krasel, S., Ciliox, A.: New interconnect technologies for power modules. In: Proceedings of CIPS, pp. 380–384, Nuremberg (2012)

    Google Scholar 

  18. Hamidi, A.: Contribution à l’étude des phénomènes de fatigue thermique des modules IGBT de forte puissance destines aux application de traction. PhD-Thesis, Grenoble (1998)

    Google Scholar 

  19. Hecht, U., Scheuermann, U.: Static and transient thermal resistance of advanced power modules. In: Proceedings of PCIM Europe, pp. 299–305, Nuremberg (2001)

    Google Scholar 

  20. Hensler, A., Lutz, J., Thoben, M., Guth, K.: First power cycling results of improved packaging technologies for hybrid electrical vehicle applications. In: Proceedings of CIPS, pp. 85–90, Nuremberg (2010)

    Google Scholar 

  21. Herold, C., Hensler, A., Lutz, J., Thoben, M., Guth, K.: Power cycling capability of new technologies in power modules for hybrid electric vehicles. In: Proceedings of PCIM Europe, pp. 486–493, Nuremberg (2012)

    Google Scholar 

  22. Heraeus: Thick Copper Bonding Wire of Extreme Softness. online https://www.heraeus.com/media/media/het/doc_het/products_and_solutions_het_documents/bonding_wires_documents/fact_sheets/Factsheet_PowerCuSoft.pdf, published July 20, 2015, visited Ju1y 10, 2017

  23. Hofmann, K., Herold, C., Beier, M., Lutz, J., Friebe, J.: Reliability of Discrete Power Semiconductor Packages and Systems – D2Pak and CanPAK in Comparison. In: Proceedings of EPE, Lille (2013)

    Google Scholar 

  24. Hori, M., Saito, M., Hinata, Y., Nashida, N., Ikeda, Y., Mochizuki, E.: Compact, low loss and high reliable next generation Si-IGBT module with advanced structure. In: Proceedings of PCIM Europe, pp. 472–477, Nuremberg (2014)

    Google Scholar 

  25. Jordà, X., Perpiñà, X., Vellvehi, M., Millán, J., Ferriz, A.: Thermal characterization of insulated metal substrates with a power test chip. In: Proceedings of ISPSD, pp. 172–175, Barcelona (2009)

    Google Scholar 

  26. Kamon, M., Tsuk, M.J., White, J.: FastHenry: A multipole-accelerated 3-D inductance extraction program. In: Proceedings of ACM/IEEE Design Automation Conference, pp. 678–683 (1993)

    Google Scholar 

  27. Klaka, S.: Eine Niedertemperatur-Verbindungstechnik zum Aufbau von Leistungshalbleitermodulen, Dissertation, Braunschweig (1996)

    Google Scholar 

  28. Kuhnert, R., Schwarzbauer, H.: A novel large area joining technique for improved power device performance. IEEE Trans. Ind. Appl. 27, pp. 93–95 (1991)

    Article  Google Scholar 

  29. Kyocera: Si Si3N4 AMB products, product presentation (2005) http://www.ivf.se/upload/pdf-filer/Arbetsomr%C3%A5den/Elektronikutveckling/KYOCERA%20Si3N4%20AMB%20Products%202005%20(R0052D).pdf

  30. Lappe, R., Conrad, H., Kronberg, M.: Leistungselektronik, 2nd edn. Verlag Technik, Berlin (1991)

    Google Scholar 

  31. Lindemann, A.: Kolloquium Halbleiter-Leistungsbauelemente und ihre systemtechnische Integration, Freiburg (2001)

    Google Scholar 

  32. Lindemann, A., Friedrichs, P., Rupp, R.: New semiconductor material power components for high end power supplies. In: Proceedings of PCIM Europe, pp. 149–154, Nuremberg (2002)

    Google Scholar 

  33. MacDonald, W.D., Eagar, T.W.: Transient liquid phase bonding. Annu. Rev. Mater. Sci. 22, pp. 23–46 (1992)

    Google Scholar 

  34. Mertens, C., Sittig, R.: Low temperature joining technique for improved reliability. In: Proceedings of CIPS, pp. 95–100, Nuremberg (2002)

    Google Scholar 

  35. Miyazaki, H., Iwakiri, S., Hirotsuru, H., Fukuda, S., Hirao, K., Hyuga, H.: Effect of mechanical properties of the ceramic substrate on the thermal fatigue of Cu metallized ceramic substrates. In: IEEE 18th Electronics Packaging Technology Conference (EPTC) (2016)

    Google Scholar 

  36. Motto, E.R., Donlon, J.F.: IGBT module with user accessible on-chip current and temperature. In: Proceedings of Applied Power Electronics Conference and Exposition (APEC), pp. 176–181, Orlando (2012)

    Google Scholar 

  37. Mourick, P., Steger, J., Tursky, W.: 750A 75 V MOSFET power module with sub-nH inductance. In: Proceedings of ISPSD, pp. 205–208 (2002)

    Google Scholar 

  38. Poech, M.H., Fraunhofer-Institut Siliziumtechnologie, Itzehoe, private communication (2004)

    Google Scholar 

  39. Poller, T., D’Arco, S., Hernes, M., Lutz, J.: Determination of the thermal and electrical contact resistance of press pack housings. In: Proceedings of EPE, Lille (2013)

    Google Scholar 

  40. Poller, T., D’Arco, S., Hernes, M., Ardal, A.R., Lutz, J.: Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs. Microelectron. Reliab. 53, pp. 1755–1759 (2013)

    Article  Google Scholar 

  41. Rudzki, J., Osterwald, F., Becker, M., Eisele, R.: Novel Cu-bond contacts on sintered metal buffer for power module with extended capabilities. In: Proceedings of PCIM Europe, pp. 784–791, Nuremberg (2012)

    Google Scholar 

  42. Sawle, A., Woodworth, A.: Innovative developments in power packaging technology improve overall device performance. In: Proceedings of PCIM Europe, pp. 333–339, Nuremberg (2000)

    Google Scholar 

  43. Sawle, A., Standing, M., Sammon, T., Woodworth, A.: Directfet™ – a proprietary new source mounted power package for board mounted power. In: Proceedings of PCIM Europe, pp. 473–477, Nuremberg (2001)

    Google Scholar 

  44. Scheuermann, U., Wiedl, P.: Low temperature joining technology – a high reliability alternative to solder contacts. In: Workshop on Metal Ceramic Composites for Functional Applications, pp. 181–192, Wien (1997)

    Google Scholar 

  45. Scheuermann, U.: Power module design for HV-IGBTs with extended reliability. In: Proceedings of PCIM Europe, pp. 49–54, Nuremberg (1999)

    Google Scholar 

  46. Scheuermann, U.: Aufbau- und Verbindungstechnik in der Leistungselektronik, in Schröder D, Elektrische Antriebe Bd. 3 – Leistungselektronische Bauelemente, 2. Auflage, Springer Berlin (2006)

    Google Scholar 

  47. Scheuermann, U., Beckedahl, P.: The road to the next generation power module – 100% solder free design. In: Proceedings of CIPS, pp. 111–120, Nuremberg, (2008)

    Google Scholar 

  48. Scheuermann, U., Schmidt, R.: Investigations on the VCE(T) method to determine the junction temperature by using the chip itself as sensor. In: Proceedings of PCIM Europe, pp. 802–807, Nuremberg (2009)

    Google Scholar 

  49. Scheuermann, U.: Reliability of planar SKiN interconnect technology. In: Proceedings of CIPS, pp. 464–471, Nuremberg (2012)

    Google Scholar 

  50. Scheuermann, U.: Packaging and reliability of power modules – principles, achievements and future challenges. In: Proceedings of PCIM Europe, pp. 35–50, Nuremberg (2015)

    Google Scholar 

  51. Schmidt, R., Scheuermann, U., Milke, E.: Al-Clad Cu wire bonds multiply power cycling lifetime of advanced power modules. In: Proceedings of PCIM Europe, pp. 776–783, Nuremberg (2012)

    Google Scholar 

  52. Schulz-Harder, T., Exel, J., Meyer, A., Licht, K., Loddenkötter, M.: Micro channel water cooled power modules. In: Proceedings of PCIM Europe, pp. 9–14, Nuremberg (2000)

    Google Scholar 

  53. Siepe, D., Bayerer, R., Roth, R.: The future of wire bonding is? Wire Bonding! In: Proceedings of CIPS, pp. 115–118, Nuremberg (2010)

    Google Scholar 

  54. Smithells, C.J.: Metals Reference Book, 5th edn. Butterworths, London & Boston (1976)

    Google Scholar 

  55. Tinschert, L., Årdal, A.R., Poller, T., Bohländer, M., Hernes, M., Lutz, J.: Possible failure modes in Press-Pack IGBTs. Microelectron. Reliab. 55(6), pp. 903–911 (2015)

    Article  Google Scholar 

  56. Wen, S., Huff, D., Lu, G.Q., Cash, M., Lorenz, R.D.: Dimple-array interconnect technique for interconnecting power devices and power modules. In: Proceedings of CPES Seminar, pp. 75–80, Blacksburg (2001)

    Google Scholar 

  57. Yamada, J., Simizu, T., Kawaguchi, M., Nakamura, M., Kikuchi, M., Thal, E.: The latest high performance and high reliability IGBT technology in new packages with conventional pin layout. In: Proceedings of PCIM Europe, pp. 329–333, Nuremberg (2003)

    Google Scholar 

  58. Zhang, J., Choosing the right MOSFET package. IR application note Feb 2004, http://www.eepn.com/Locator/Products/ArticleID/29270/29270.html

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Lutz, J., Schlangenotto, H., Scheuermann, U., De Doncker, R. (2018). Packaging of Power Devices. In: Semiconductor Power Devices. Springer, Cham. https://doi.org/10.1007/978-3-319-70917-8_11

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  • DOI: https://doi.org/10.1007/978-3-319-70917-8_11

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