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Recent Global Research and Education: Technological Challenges pp 137–141Cite as

Manipulation of Single Charges Using Dopant Atoms in Silicon—Interplay with Intervalley Phonon Emission

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Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 519))

Abstract

We make a brief review about our research on single electron manipulation using individual donors in silicon. The device we developed essentially consists of a silicon nanowire MOS field-effect transistor with local arsenic implantation between a set of fine gates. We demonstrate that, by tuning the gate voltages, electrons are exclusively transferred via individual donor atoms and the number of transferred electrons is tunable. Control of single phonon emission using the present device is also discussed.

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Acknowledgments

This work was partially supported by the Grants-in-Aid for Scientific Research Nos. 23226009, 25289098, 25600015, 25706003, 26289105, 15K13970, 16H02339 and 16H06087 from the Japan Society for the Promotion of Science.

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Authors and Affiliations

  1. Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan

    Yukinori Ono & Masahiro Hori

  2. NTT Basic Research Laboratory, Kanagawa, Japan

    Gabriel P. Lansbergen & Akira Fujiwara

Authors
  1. Yukinori Ono
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  2. Masahiro Hori
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  3. Gabriel P. Lansbergen
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  4. Akira Fujiwara
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Corresponding author

Correspondence to Yukinori Ono .

Editor information

Editors and Affiliations

  1. Institute of Metrology and Biomedical En, Warsaw University of Technology Institute of Metrology and Biomedical En, Warsaw, Poland

    Ryszard Jabłoński

  2. Institute of Metrology and Biomedical En, Warsaw University of Technology Institute of Metrology and Biomedical En, Warsaw, Poland

    Roman Szewczyk

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Ono, Y., Hori, M., Lansbergen, G.P., Fujiwara, A. (2017). Manipulation of Single Charges Using Dopant Atoms in Silicon—Interplay with Intervalley Phonon Emission. In: Jabłoński, R., Szewczyk, R. (eds) Recent Global Research and Education: Technological Challenges. Advances in Intelligent Systems and Computing, vol 519. Springer, Cham. https://doi.org/10.1007/978-3-319-46490-9_20

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  • DOI: https://doi.org/10.1007/978-3-319-46490-9_20

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-46489-3

  • Online ISBN: 978-3-319-46490-9

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