Abstract
Silicon-based semiconductor devices are rapidly approaching the theoretical limit of operation, making them unsuitable for future military and industrial applications. In a high electron mobility transistor (HEMT), two-dimensional electron gas (2DEG) which is formed at AlGaN/GaN interface is a critical part to tune the performance of HEMT devices. Inserting high bandgap layers, especially AlN spacer layer between AlGaN and GaN layer improves 2DEG density, mobility, and effects on quantum well. ATLAS toolbox of Silvaco results shows ID-VDS characteristics of the 1 μm gate length. Simulation results show both piezoelectric and spontaneous polarization effects at the interfaces of Al0.30Ga0.70N/AlN/GaN structure, contrary to the conventional HEMTs. The insertion of the very thin AlN interfacial layer (1 nm) supports high mobility at high sheet charge densities by increasing the effectiveness and decreasing alloy scattering. Devices based on this structure exhibit good DC and RF performance.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Ambacher O, Foutz B, Smart J, Shealy JR, Weimann NG, Chu K, Murphy M, Sierakowski AJ, Schaff WJ, Eastman LF, Dimitrov R, Mitchell A, Stutzmann M (2000) Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J Appl Phys 87:334–344 (1 Jan 2000)
Chen Tai, Hsu Chih-Wei Jr, Forsberg Urban, Janzén Erik (2015) Metal organic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates. J Appl Phys 117(8):085301
Javorka P (2004) Fabrication and characterization of AlGaN/GaN high electron mobility transistors
Kim J, Stokes EB, Hunter GW, Sarkozy S (2010) Wide bandgap Semiconductor materials and devices 11-and-state-of-the-art program on compound semi-conductors, 52(sotapocs52) 28(4)
Pierret RF (1996) Semiconductor device fundamentals. Addison Wesley Long-man, Massachusetts, p 792
Sze SM (1998) Modern semiconductor device physics. Wiley, New York, p 556
Tzeng S (2004) Low-frequency noise sources in III-V semiconductor heterostructures
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2016 Springer International Publishing Switzerland
About this chapter
Cite this chapter
Aliparast, S., Aliparast, P. (2016). Physical-Based Simulation of a GaN High Electron Mobility Transistor Devices. In: Karakoc, T., Ozerdem, M., Sogut, M., Colpan, C., Altuntas, O., Açıkkalp, E. (eds) Sustainable Aviation. Springer, Cham. https://doi.org/10.1007/978-3-319-34181-1_18
Download citation
DOI: https://doi.org/10.1007/978-3-319-34181-1_18
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-34179-8
Online ISBN: 978-3-319-34181-1
eBook Packages: EnergyEnergy (R0)