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Relationship Between Al\(_{2}\)O\(_{3}\) Bulk and Interface Properties

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New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface

Part of the book series: Springer Theses ((Springer Theses))

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Abstract

Surface passivation is directly related to the chemical structure and composition of the silicon-insulator interface. However, the chemical properties of the interface, as an essentially two-dimensional feature, are not easily measured, still less those of the various electronic states, which occupy only a small fraction of interfacial sites.

If you want to understand function, study structure.

—Francis Crick

What Mad Pursuit: A Personal View of Scientific Discovery

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  1. Research School of Engineering, The Australian National University, Canberra, ACT, Australia

    Lachlan E. Black

  2. Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands

    Lachlan E. Black

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Black, L.E. (2016). Relationship Between Al\(_{2}\)O\(_{3}\) Bulk and Interface Properties. In: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-32521-7_9

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  • DOI: https://doi.org/10.1007/978-3-319-32521-7_9

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