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Porous Silicon Formation by Galvanic Etching

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Handbook of Porous Silicon

Abstract

The different classes of electrochemical etching of silicon are briefly compared and contrasted, and then the literature on galvanic etching is comprehensively reviewed. Thick uniform mesoporous films with surface areas as high as 910 m2/g have been achieved with optimized galvanic etching (Fig. 1).

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Authors and Affiliations

  1. Department of Chemistry, West Chester University, West Chester, PA, 19380, USA

    Kurt W. Kolasinski

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  1. Kurt W. Kolasinski
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Correspondence to Kurt W. Kolasinski .

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Editors and Affiliations

  1. Malvern, Worcestershire, United Kingdom

    Leigh Canham

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© 2014 Springer International Publishing Switzerland

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Kolasinski, K.W. (2014). Porous Silicon Formation by Galvanic Etching. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-05744-6_3

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