Abstract
Rutile tin dioxide (SnO2) layers have been used in many industrial applications due to their electrical, optical, electrochemical properties, and high-chemical stability. Moreover, they can find application for coating in biomedical devices due to their antimicrobial effect and high biocompatibility. So far, for such applications, researchers have attempted to fabricate SnO2 nanorods as reinforcing fillers for biopolymer implants as scaffolds for tissue engineering. The biocidal activity of such structures against gram-positive bacteria S. aureus and gram-negative bacteria E. coli has been demonstrated, as well as their non-toxicity. Applying SnO2 using the sol–gel method, on the other hand, showed an increase in the corrosion resistance of A36 steel. In this study, SnO2 films were grown on 316LVM steel, commonly used for implants as biocompatible and antibacterial layer. A number of different deposition techniques can be used to produce such a layer, however, the authors have chosen the atomic layer deposition (ALD) technique, which ensures high-layer uniformity, low density of defects, and high smoothness. The ALD method allows for even coverage of the component with a thin film. By controlling the process parameters, such as the number of cycles and temperature, we can obtain different layer thicknesses with various properties. Studies included chemical composition (AES), pitting corrosion resistance, potentiodynamic tests, electrochemical impedance spectroscopy (EIS), ion permeability, and scanning electron microscope (SEM) surface observations. According to the obtained data, it was found that the results strictly depend on the parameters of the process.
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The project was funded by the National Science Center, Poland allocated on the basis of the decision No. 2018/29/B/ST8/02314.
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Basiaga, M. et al. (2022). Electrochemical Behavior of SnO2 Layer Deposited on Biomaterials Used in Bone Surgery. In: Öchsner, A., Altenbach, H. (eds) Engineering Design Applications IV. Advanced Structured Materials, vol 172. Springer, Cham. https://doi.org/10.1007/978-3-030-97925-6_4
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