Abstract
This work focuses on some of the most relevant numerical issues in the solution of the drift-diffusion model for semiconductor devices. The drift-diffusion model consists of an elliptic and two parabolic partial differential equations which are nonlinearly coupled. A reliable numerical approximation of this model unavoidably leads to choose a suitable tessellation of the computational domain as well as specific solvers for linear and nonlinear systems of equations. These are the two main issues tackled in this work, after introducing a classical discretization of the drift-diffusion model based on finite elements. Numerical experiments are also provided to investigate the performances both of up-to-date and of advanced numerical procedures.
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Notes
- 1.
We can relax the regularity assumption on σ, by choosing σ ∈ L2( Ω). By exploiting inequality \(\| uv\|{ }_{L^2(\Omega )}\le \| u\|{ }_{L^4(\Omega )}\| v\|{ }_{L^4(\Omega )}\) and the Sobolev immersion theorem, we have \(\big | a_{\text{NLP}}(u, v) \big |\le \big [ \| \varepsilon \|{ }_{L^\infty (\Omega )} + \| \sigma \|{ }_{L^2(\Omega )}\big ] \| u\|{ }_V \| v\|{ }_V\), i.e., the continuity property with \(M=\| \varepsilon \|{ }_{L^\infty (\Omega )} + \| \sigma \|{ }_{L^2(\Omega )}\).
- 2.
The basic geometric concept behind this approach has been discussed already by Dirichlet in 1850 [42].
- 3.
faculty.cse.tamu.edu/ davis/suitesparse.html.
- 4.
- 5.
- 6.
The computations have been run on a portable PC equipped with INTEL i5 processor 2.4 GHz and 8 GB of RAM.
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Mauri, A.G., Morini, B., Perotto, S., Sgallari, F. (2023). Grid Generation and Algebraic Solvers. In: Rudan, M., Brunetti, R., Reggiani, S. (eds) Springer Handbook of Semiconductor Devices . Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-030-79827-7_38
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