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Special Processes Developed for Microcircuit Technology

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The Physics of Microfabrication

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Abstract

Since we are illustrating the principles of microfabrication with application to microelectronics, we devote this chapter to discussing in some detail those special processes that have been developed for planar silicon technology, namely, epitaxy, oxidation, doping, and annealing. This is not to imply that analogous or similar processes could not or have not been applied to other materials and devices, but it reflects the fact that the major thrust in the microdevice area over the past two decades has been associated with silicon, and hence more work has been done in this area. We have included some special epitaxial processes developed for devices utilizing III–V compound semiconductors, since these are of emerging importance for high-speed microcircuits.

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  1. SRI International (formerly Stanford Research Institute), Menlo Park, California, USA

    Ivor Brodie & Julius J. Muray

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Brodie, I., Muray, J.J. (1982). Special Processes Developed for Microcircuit Technology. In: The Physics of Microfabrication. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2160-4_5

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  • DOI: https://doi.org/10.1007/978-1-4899-2160-4_5

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-2162-8

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