Abstract
In the last decade a great interest has been devoted to optical absorption in Multiple Quantum Well (MQW) and superlattice based devices. These structures are characterized by the confinement of charge carriers, electrons and holes, in the neighborhood of each other. This carrier confinement enhances optical absorption via the excitonic resonance in the presence of external electric field. Room temperature Stark Effect is thus improved and is known as “Quantum Confined Stark Effect” (QCSE). As in bulk material, Stark Effect is characterized by the red shift of the optical absorption edge resulting from band gap shrinkage.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
F. C. Jain, K. K. Bhattacharjee “Multiple Quantum Well Optical Modulator Using Surface Acoustic Wave Induced Stark Effect.” IEEE Photonics Technology Letters Vol. 1 No. 10 (October 1989).
D. Cullen, W.J. Tanski, S. W. Merritt, R. N. Sacks, R. D. Carroll, and E. J. Branciforte. “Heterojunction Acoustic Charge Transport Device Technology.” IEEE Ultrasonics Symposium (1988).
Y. Kim and W.D. Hunt, “Acoustic fields and velocities for surface acoustic wave propagation in multilayered structures : an extension of the Laguerre polynomial approch.” J. Appl. Phys., 68 (10) (1990).
G. E. Pikus and G. L. Bir. “Effect of deformation on the hole energy spectrum of germanium and silicoa” Soviet Physics. Solid State Vol. 1 (1960), pp1502.
Z. Xu and P. Petroff. “Strain-induced Carrier Confinement in Buried Stressor Structure.” J. Appl. Phys. 69 (9) 1 (May 1991).
W. Q. Chen and S. K. Hark. “Strain-induced Effects in (111)-oriented InAsP/InP, InGaAs/InAlAs quantum wells on InP Substrate.” J. Appl Phys. Vol. 77 (11) (1 June 1995).
D.L. Smith, Sh.M. Kogan, P.P. Ruden and C. Mailhiot “Acousto-optic modulation of m-V semiconductor multiple quantum wells.” Physical Review B Vol. 53, No 3 15 January 1996.
G. Bastard. Wave mechanics Applied to semiconductor heterostructures Les Editions de Physique France
K. Nakamura, A. Shimizu, M. Koshiba and K. Hayata. “Finite-element analysis of quantum wells of arbitrary semiconductors with arbitrary potential profiles.” IEEE J. Quantum Electronics. Vol.25 No. (5 May 1989)
K. Nakamura, A. Shimizu, K. Fujii, M. Koshiba and K. Hayata. “Numerical analysis of the absorption and the refractive index change in arbitrary semiconductor quantum-well structures.” IEEE J Quant. Electro. Vol 28 No 7, (July 1992).
G. Lengyel, K. W. Jelley and W. H. Engelmann. “A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures.” IEEE J. Quantum Electronics. Vol. 26 No. 2 (February 1990).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1997 Springer Science+Business Media New York
About this chapter
Cite this chapter
Gazalet, J., Bahlak, S., Lefebvre, J.E., Gryba, T. (1997). Limits of Acousto-Electro-Optic GaAs/GaAlAs Multiple Quantum Well Modulators. In: Lampropoulos, G.A., Lessard, R.A. (eds) Applications of Photonic Technology 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9250-8_52
Download citation
DOI: https://doi.org/10.1007/978-1-4757-9250-8_52
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-9252-2
Online ISBN: 978-1-4757-9250-8
eBook Packages: Springer Book Archive