Abstract
In general, the detectors used for detecting electromagnetic radiation fall into one of two categories: (1) classical or thermal detectors and (2) quantum or photon detectors.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
E.H. Putley, in Semiconductors and Semimetals (R.K. Willardson and A.C. Beer, eds.), Vol. 5, pp. 259–285, Academic Press, New York (1970).
E.H. Putley, in Topics in Applied Physics, Optical and Infrared Detectors (R.J. Keyes, ed.), Vol. 19, pp. 71–100, Springer-Verlag, Berlin, (1980).
P.W. Kruse, in Topics in Applied Physics, Optical and Infrared Detectors (R.J. Keyes, ed.), Vol. 19, pp. 5–69, Springer-Verlag, Berlin (1980).
S.M. Ryvkin, Photoelectric Effects in Semiconductors, Consultants Bureau, New York (1964).
R.P. Riesz, High-speed semiconductor photodiodes, Rev. Sci Instrum. 33, 994–998 (1962).
C.A. Burrus and W.M. Sharpless, Planar p-n-junction germanium photodiodes for use at microwave modulation frequencies, Solid-State Electron. 13, 1283–1287 (1970).
D.H. Seib and L.K. Aukerman, in Advances in Electronics and Electron Physics (L. Marton, ed.), Vol. 34, pp. 95–221, Academic Press, New York (1973).
D.K. Hohnke and H. Holloway, Epitaxial PbSe Schottky-barrier diodes for infrared detection, Appl. Phys. Lett. 24, 633–635 (1974).
D.K. Honke, H. Holloway, K.F. Yeung, and M. Hurley, Thin-film (Pb, Sn)Se photodiodes for 8–12 μm operation, Appl. Phys. Lett. 29, 98–100 (1976).
S.G. Parker, Expitaxial deposition of Pb x Sn1-x Te on Pb x Sn1-x Te substrates in a closed system, J. Electrochm. Soc. 123, 920–924 (1976).
T.K. Chu, A.C. Bouley, and G.M. Black, Preparation of epitaxial thin film lead salt infrared detectors, Proc. SPIE—Int. Soc. Opt. Eng. 285 (Infrared Detect. Mater.) (1981), p. 33.
M. Drinkwine, J. Rozenbergs, S. Jost, and A. Amith, The lead/lead sulfide selenide PbS0.5Se0.5 interface and performance of lead/lead sulfide selenide (PbS0.5Se0.5) photodiodes, Proc. SPIE—Int. Soc. Opt. Eng. 285 (Infrared Detect. Mater.) (1981), p. 36.
J. Baars, D. Basset, and M. Schulz, Metal-semiconductor barrier studies of PbTe, Phys. Status Solidi(a) 49, 483–488 (1978).
E.Y. Chan and H.C. Card, Infrared optoelectronic properties of metal-germanium Schottky barriers, IEEE Trans. Electron. Devices ED-27, 78–83 (1980).
R. B. Schoolar, J. D. Jensen, G. M. Black, S. Foti, and A. C. Bouley, Multispectral Pb x Sn1-x and Pb y Sn1-y Se photovoltaic infrared detectors, Infrared Phys. 20, 271–275 (1980).
D.L. Polla and A.K. Sood, Schottky barrier photodiodes in pHg1-x Cd x Te, J. Appl. Phys. 51, 4908–4912 (1980).
Y. Nagao, T. Hariu, and Y. Shibata, GaSb Schottky diodes for infrared detectors, IEEE Trans. Electron Devices ED-28, 407–411 (1981).
S.C. Gupta, B.L. Sharma, and V.V. Agashe, Comparison of Schottky barrier and diffused junction infrared detectors, Infrared Phys. 19, 545–548 (1979).
M.V. Schneider, Schottky barrier photodiodes with antireflection coating, Bell System Tech. J. 45, 1611–1638 (1966).
W.M. Sharpless, Evaluation of a specially designed GaAs Schottky barrier photodiode using 6328 Å radiation modulated at 4 GHz, Appl. Opt. 9, 489–494 (1970).
F.D. Shepherd, Recent advances in Schottky IR-photodiodes and projected camera capabilities, International electron device meeting, Washington D.C., 7 December 1981.
W. Shockley and W.T. Read, Statistics of the recombination of holes and electrons, Phys. Rev. 87, 835–842 (1952).
A.G. Milnes, Semiconductor Devices and Integrated Electronics, Van Nostrand Reinhold Company, New York (1980).
J.S. Blakemore, Semiconductor Statistics, Pergamon Press, Oxford (1962).
W. van Roosbroeck and W. Shockley, Photon radiative recombination of electrons and holes in germanium, Phys. Rev. 94, 1558–1560 (1954).
A.R. Beattie and P.T. Landesberg, Auger effect in semiconductors, Proc. R. Soc. London Ser. A 249, 16–29 (1959).
A.R. Beattie and P.T. Landesberg, One-dimensional overlap functions and their application to Auger recombination in semiconductors, Proc. R. Soc. London Ser. A 258, 486–495 (1960).
H. Preier, Comparison of the junction resistance of (PbSn)Te and (PbSn)Se infrared detector diodes, Infrared Phys. 18, 43–46 (1978).
S.M. Sze, Physics of Semiconductor Devices, John Wiley and Sons, New York (1969).
S.C. Gupta, B.L. Sharma, and V.V. Agashe, Nomographs for evaluating parameters of Schottky barrier IR-detectors, Infrared Phys. 19, 673–675 (1979).
J. Bardeen, Surface states and rectification at a metal semiconductor contact, Phys. Rev. 71, 717–727 (1947).
A.M. Cowley and S.M. Sze, Surface States and barrier height of metal-semiconductor systems, J. Appl. Phys. 96, 3212–3220 (1965).
V. Heine, Theory of surface states, Phys. Rev. A 138, 1689–1696 (1965).
S.G. Louie, J R. Chelikowsky, and M.L. Cohen, Ionicity and the theory of Schottky barriers, Phys. Rev. B 15, 2154–2162 (1977).
L.J. Brillson, Transition in Schottky barrier formation with chemical reactivity, Phys. Rev. Lett. 40, 260–263 (1978).
K. Zdansky and Z. Sroubek, in Physics of Semiconductors (B.L.H. Wilson, ed.), Conference Series No. 43, pp. 761–764, Institute of Physics, London (1979).
R.H. Williams, V. Montgomery, and R.R. Varma, Chemical effects in Schottky barrier formation, J. Phys. C: Solid State Phys. 11, L735-L738 (1978).
M. Schlüter, Chemical trends in metal-semiconductor barrier heights, Phys. Rev. B 17, 5044–5047 (1978).
V.S. Fomenko, Handbook of Thermionic Properties, Plenum Press, New York (1966).
E.H. Rhoderick, Metal-Semiconductor Contacts, Clarendon Press, Oxford (1978).
H.B. Michaelson, Relation between an atomic electro negativity scale and the work function, IBM J. Res. Devp. 22, 72–80 (1978).
H.B. Michaelson,spi Work Function of the Elements, Handbook of Chemistry and Physics (R.C. Weast, ed.), 58th ed. CRC Press, Cleveland, Ohio, pp. E81-E82 (1977–1978).
R.Z. Bachrach and A. Bianconi, Interface states at the Ga-GaAs interface, J. Vac. Sci. Technol. 15, 525–528 (1978).
L.J. Brillson, Chemical reaction and charge redistribution at metal-semiconductor interfaces, J. Vac. Sci. Technol. 15, 1378–1383 (1978).
I. Lindau, P.W. Chye, C.M. Garner, P. Pianetta, C.Y. Su, and W.C. Spicer, New phenomena in Schottky barrier formation on III-V compounds, J. Vac. Sci Technol. 15, 1332–1339 (1978).
L.J. Brillson, Chemical reactions and local charge redistribution at metal-CdS and CdSe interfaces, Phys. Rev. B 18, 2431–2446 (1978).
V.L. Rideout, Review of the theory, technology and application of metal-semiconductor rectifiers, Thin Solid Films 48, 261–291 (1978).
F. Lukes, Oxidation of Si and GaAs in air at room temperature, Surf. Sci. 30, 91–100 (1972).
A.C. Adams and B.R. Pruniax, Gallium arsenide surface film evaluation by ellipsometry and its effect on Schottky barriers, J. Electrochem. Soc. 120, 408–414 (1973).
R.B. Schoolar and J.D. Jensen, Narrowband detection at long wavelengths with epitaxial Pb y Sn1-y Se films, Appl. Phys. Lett. 31, 536–538 (1977).
R.B. Schoolar, J.D. Jensen, and G.M. Black, Composition-turned PbS x Se1-x , Schottkybarrier infrared detectors, Appl. Phys. Lett. 31, 620–622 (1977).
R. Longshore, M. Jasper, B. Summer, and P. LoVecehio, Evaluation of Pb0.8Sn0.2Te detector fabrication using surface analysis, Infrared Phys. 15, 311–315 (1975).
H.C. Card, E.S. Yang, and P. Panayotatos, Peaked Schottky-barrier solar cells by Al-Si metallurigical reactions, Appl. Phys. Lett. 30, 643–645 (1977).
J. Basterfield, J.M. Shannon, and A. Gill, The nature of barrier height variations in alloyed Al-Si Schottky barrier diodes, Solid State Electron. 18, 290–291 (1975).
S. Buchner, T.S. Sun, W.A. Beck, N.E. Byer, and J.M. Chen, Schottky barrier formation on (Pb, Sn)Te, J. Vac. Sci. Technol. 16, 1171–1173 (1979).
B.L. Sharma and S.C. Gupta, Metal-semiconductor Schottky barrier junctions, Part 1-Fabrication, Solid State Technol. 23, 97–101 (May 1980).
J.D. Jensen and R.B. Schoolar, Surface charge transport in PbS x Se1-x and PbS1-y Sn y Se epitaxial films, J. Voc. Sci. Technol. 13, 920–925 (1976).
M. Bleicher, H.D. Wurzinger, H. Maier, and H. Preier, n-type PbS and PbS1-x Sn x layers prepared by the hot-wall epitaxy, J. Mater. Sci. 12, 317–322 (1977).
D. Tsang and S.E. Schwarz, Detection of 10 km radiation with point-contact Schottky diodes, Appl. Phys. Lett. 30, 263–265 (1977).
R.D. Baertsch and J.R. Richardson, An Ag-GaAs Schottky-barrier ultraviolet detector, J. Appl. Phys. 40, 229–236 (1969).
G.E. Stillman. C.M. Wolfe, A.G. Foyt, and W.T. Lindley, Schottky barrier ln x Ga1-x As alloy avalanche photodiodes for 1.06 μm, Appl. Phys. Lett. 24, 8–10 (1974).
J.R. Richardson and R.D. Baertsch, Zinc sulfide Schottky barrier ultra-violet detectors, Solid State Electron. 12, 393–397 (1969).
E.M. Logothetis, H. Holloway, A.J. Varga, and E. Wilkes, Infrared detection by Schottky barriers in epitaxial PbTe, Appl. Phys. Lett. 19, 318–320 (1971).
R.A. Chapman, M.R. Johnson, and H.B. Morris, Metal-semiconductor diode infrared detector having semi-transparent electrode, U.S. Patent 3, 980, 915 (September 14, 1976).
B.L. Sharma and S.C. Gupta, Metal-semiconductor Schottky barrier junctions: Part II— Characterization and applications, Solid State Technol. 23, 90–95 (June 1980).
M. Lanir, A.H.B. Vanderwyck, and C.C. Wang, EBIC characterization of HgCdTe crystals and photodiodes, J. Electron. Mat. 8, 175–189 (1979).
R.W. Grant, J.G. Pasko, J.T. Longo, and A.M. Andrews, ESCA surface studies of Pb1-x Te devices, J. Vac. Sci Technol. 13, 940–947 (1976).
A. Christon and K. Sleger, in GaAs and Related Compunds, St. Louis 1976 (L.F. Eastman, ed.), Conference Series No. 33b, pp. 191–200, Institute of Physics, London (1977).
J.J. Lander, H. Schreiber, Jr., T.M. Buch, and J.B. Mathews, Microscopy of internal crystal imperfections in Si p-n junction diodes by use of electron beam, Appl. Phys. Lett. 3, 206–207 (1963).
W. Czaja, Response of Si and GaP p-n junctions to a 5- to 40-keV electron beam, J. Appl. Phys. 37, 4236–4248 (1966).
T.E. Everhart, O.C. Wells, and R.K. Matta, A novel method of semiconductor device measurements, Proc. IEEE 52, 1642–1647 (1964).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1984 Plenum Press, New York
About this chapter
Cite this chapter
Gupta, S.C., Preier, H. (1984). Schottky Barrier Photodiodes. In: Sharma, B.L. (eds) Metal-Semiconductor Schottky Barrier Junctions and Their Applications. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-4655-5_5
Download citation
DOI: https://doi.org/10.1007/978-1-4684-4655-5_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-4657-9
Online ISBN: 978-1-4684-4655-5
eBook Packages: Springer Book Archive