Abstract
The use of silicon-diode-array charge-storage targets in vidicon type of operation is discussed extensively in Chapter 15 and in published literature.1–7 Since the initial Introduction of such a vidicon tube by the Bell Telephone Laboratories, general interest in silicon-diode-array targets has developed greatly.
Called SiEBIR in this text, EBS by Westinghouse, SIT by RCA, and IDAC (Intensified Diode Array Camera) by the U.S. Army.
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References
T. M. Buck, H. C. Casey, Jr., J. V. Dalton, and M. Yamin, “Influence of Bulk and Surface Properties on Image Sensing Silicon-Diode Arrays,” Bell Syst. Tech. J. 47(9) (1968).
M. H. Crowell, T. M. Buck, E. F. Labuda, J. V. Dalton, and E. J. Walsh, “A Camera Tube with a Silicon-Diode Array Target,” Bell Syst. Tech. J. 46(4) (1967).
M. H. Crowell, and E. F. Labuda, “The Silicon-Diode Array Camera Tube,” 48(7) (1969).
E. I. Gordon, “A Solid-State Electron Tube for the PICTURE-PHONE Set,” Bell Laboratories Record 45(6) (1967).
E. L. Gordon and M. H. Crowell, “A Charge-Storage Target for Electron-Image Sensing,” 47 (9) (1968).
P. H. Wendland, “A Charge-Storage Diode Vidicon Camera Tube,” IEEE Trans. Elect. Devices ED-14 (6) (1967).
Green, M. and Collings, P., “The Burn-Resistant SEC Camera Tube,” Proceedings of the Electro-Optical Systems Design Conference, New York City, September 1970 (to be published).
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Goetze, G.W., Laponsky, A.B. (1971). Early Stages in the Development of Camera Tubes Employing the Silicon-Diode Array as an Electron-Imaging Charge-Storage Target. In: Biberman, L.M., Nudelman, S. (eds) Photoelectronic Imaging Devices. Optical Physics and Engineering. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2931-2_12
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DOI: https://doi.org/10.1007/978-1-4684-2931-2_12
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