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Atomic Diffusion in Semiconductors pp 217–350Cite as

Diffusion in Silicon and Germanium

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Abstract

Silicon, and to a lesser extent germanium, provides the most important building foundation for modern electronic devices. Its preeminence derives both from the availability of the purest and most perfect crystals known, and from our ability to create electric potential profile structures and carrier concentrations to specifications in this material by controlled doping with impurity atoms. One of the most important methods of controlled doping is that of solid state diffusion. The high density and the high speed of devices in modern integrated circuits often require a vertical dimension of 1–3000 Å and a lateral dimension of several microns. The complexity of vertical potential structures often requires several sequential diffusion steps. The net effect of various diffusion steps on an electric potential structure may be subtractive, and there may be interactions between sequential diffusion steps. The current state of the art of diffusion processes in the fabrication of integrated circuits relies on an empirical approach with trial and error. The difficulty of such an approach will increase exponentially with the increase of the number of diffusion steps, and a semiempirical approach incorporating an understanding of the details of diffusion processes may become essential.

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Authors
  1. S. M. Hu
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  1. Department of Physics, The University Hull, England

    D. Shaw

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© 1973 Plenum Publishing Company Ltd

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Hu, S.M. (1973). Diffusion in Silicon and Germanium. In: Shaw, D. (eds) Atomic Diffusion in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8636-4_5

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  • DOI: https://doi.org/10.1007/978-1-4615-8636-4_5

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