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Energy Dissipation Processes in the Quantum Hall Regime

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Proceedings of the 17th International Conference on the Physics of Semiconductors

Abstract

Theoretical explanations of both the integer and the fractional Quantum Hall Effect (QHE) are based on the assumption of a dissipationless current /1/. The corresponding energy gaps at the Fermi energy exist for a two-dimensional electron gas (2DEG) in a strong magnetic field B at integer and certain fractional filling factors i of the Landau levels 1= Nsh/eB. Ns is the two-dimensional carrier density.

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References

  1. R.B. Laughlin, Springer Series in Solid-State Sciences 53, p. 272 (1984)

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Author information

Authors and Affiliations

  1. Physik-Department, Technische Universität München, 8046, Garching, Germany

    K. v. Klitzing, G. Ebert, N. Kleinmichel & H. Obloh

  2. Forschungslaboratorien der Siemens AG, 8000, München, Germany

    G. Dorda

  3. Forschungsinstitut der Deutschen Bundespost beim FTZ, 6100, Darmstadt, Germany

    G. Weimann

Authors
  1. K. v. Klitzing
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  2. G. Ebert
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  3. N. Kleinmichel
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  4. H. Obloh
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  5. G. Dorda
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  6. G. Weimann
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Editor information

Editors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, 94340, Palo Alto, CA, USA

    James D. Chadi

  2. Department of Applied Physics W.W. Hansen Laboratories, Stanford University, 94305, Stanford, CA, USA

    Walter A. Harrison

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© 1985 Springer Science+Business Media New York

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v. Klitzing, K., Ebert, G., Kleinmichel, N., Obloh, H., Dorda, G., Weimann, G. (1985). Energy Dissipation Processes in the Quantum Hall Regime. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_57

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  • DOI: https://doi.org/10.1007/978-1-4615-7682-2_57

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4615-7684-6

  • Online ISBN: 978-1-4615-7682-2

  • eBook Packages: Springer Book Archive

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