Abstract
The substitutional nitrogen impurities with the neutral charge, Ns (0), can be introduced into Si by nanosecond-pulsed laser annealing. This is due to nonequilibrium process of pulsed-laser annealing involving extremely rapid recrystallization and rapid cooling. It is found from ESR and PL results that PL lines of 0.746- and 0.767-eV are associated with Ns (0). The ESR result for doping of P shallow donors into Si:N also indicates that substitutional nitrogen impurities with a negative charge, Ns (−) are formed in pulsed-laser annealed Si:N:P system.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
K.L. Brower, Phys. Rev. Lett. 44 1627 (1980) & Phys. Rev. B26, 6040 (1982).
K. Murakami, K. Masuda, Y. Aoyagi and 5. Namba, Physica 116B, 564 (1983) and unpublished data.
T. Abe, K. Kikuchi, S. Shirai and S. Huraoka, Semiconductor Silicon, edited by H.R. Huff, R.J. Krieger and Y. Takeishi (Electrochem. Soc., Pennington,1981) p.54.
K. Murakami, H. Itoh, K. Takita and K. Nasuda, Physica 117B&1188,1024 (1983)
B.C. Larson, C.W. White, T.S. Noggle and J.F. Barhorst, Appl. Phys. Lett. 42, 282 (1983).
M.S. Skolnick, A.G. Cullis, and H.C. Webber, Appl. Phys. Lett. 38, 464 (1981).
N.B. Minaev and A.V. Mudryi, Phys. stat. sol. (a) 68, 561 (198l).
T.A. Kennedy and J.H. Pifer, Phys. Rev. B11, 2017 (l975).
K. Hurakami, K. Nasuda, K. Gamo, and S. Namba, Appl. Phys. Lett.: 30, 300 (1977).
S.T. Pantelides and C.T. Sah, Phys. Rev. B10, 638 (1974).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1985 Springer Science+Business Media New York
About this paper
Cite this paper
Murakami, K., Itoh, H., Takita, K., Masuda, K., Nishino, T. (1985). Supersaturated Substitutional-Nitrogen Impurities in Nanosecond-Pulsed Laser Annealed Silicon. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_340
Download citation
DOI: https://doi.org/10.1007/978-1-4615-7682-2_340
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4615-7684-6
Online ISBN: 978-1-4615-7682-2
eBook Packages: Springer Book Archive