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Oscillatory Behaviour of the Hall-Factor in Crossed Electric and Magnetic Fields in Polar Semiconductors

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Proceedings of the 17th International Conference on the Physics of Semiconductors

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Abstract

The Monte Carlo (MC) method is applied to calculate the Hall-factor (rH) for mobile electrons in polar semiconductors. It is found that at sufficient low temperature and for very pure semiconductors, rH shows an oscillatory structure as a function of E/B, which is related to the transition from a regime with streaming electrons (rH<l) to a regime with accumulated electrons (rH>l).

Work sponserd by I.I.K.W. (Belgium), project nr. 4.0002083

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References

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Author information

Authors and Affiliations

  1. Department of Physics, University of Antwerpen (UIA), B-2610, Wilrijk-AntWerpen, Belgium

    P. Warmenbol, F. M. Peeters (Senior Research Assistant) & J. T. Devreese

  2. Natl. Fund for Scient. Res., Belgium

    F. M. Peeters (Senior Research Assistant)

  3. R.U.C.A., Belgium

    J. T. Devreese

  4. T.H.E. Eindhoven, the Netherlands

    J. T. Devreese

Authors
  1. P. Warmenbol
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  2. F. M. Peeters
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  3. J. T. Devreese
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Editor information

Editors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, 94340, Palo Alto, CA, USA

    James D. Chadi

  2. Department of Applied Physics W.W. Hansen Laboratories, Stanford University, 94305, Stanford, CA, USA

    Walter A. Harrison

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© 1985 Springer Science+Business Media New York

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Warmenbol, P., Peeters, F.M., Devreese, J.T. (1985). Oscillatory Behaviour of the Hall-Factor in Crossed Electric and Magnetic Fields in Polar Semiconductors. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_305

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  • DOI: https://doi.org/10.1007/978-1-4615-7682-2_305

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4615-7684-6

  • Online ISBN: 978-1-4615-7682-2

  • eBook Packages: Springer Book Archive

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