Abstract
Similar frequency dependence of a.c. conductivity in crystalline, glassy, amorphous semiconductors, may be attributed to specific processes such as hopping (1–7), or dispersive transport (8–10). However, in compensated semiconductors, long range potential fluctuations (11–17) may not be avoided. Covariant fluctuations of band edges arise from the non uniform distribution of exhausted shallow centers; they are possibly modified, at higher temperature, by ionisation of deep centers. We derive the expression of complex conductivity due to band carriers in presence of potential fluctuations, and discuss experimental data.
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References
P.W. ANDERSON, Phys. Rev. 109, 1492, 1958
N.F. MOTT, E.A. DAVIES, Electronic Processes in Non Crystalline Materials, Clarendon Press, Oxford 1971; 2nd ed. University Press, Oxford 1979
M. POLLAK, T.H. GEBALLE, Phys. Rev. 122, 6, 1961
M. POLLAK, G.E. PIKE, Phys. Rev. Letters, 28, n°22, 1449, 1972
P.N. BUTCHER, Linear and Non Linear- Electron Transport in Solids, J.T. Devreese, V.E. Van Doren Editors, Plenum Press 1976
S.R. ELLIOTT, Phil. Mag., 36, n°6, 1291, 1977
G. RIEDER, Phys. Rev. B, 20, n° 2, 607, 1979
H. SCHER, M. LAX, Phys. Rev. B 10, 4491 AND 4502, 1973
H. SCHER, E.W. MONTROLL, Phys. Rev. B 12, 2455, 1975
H. IMGRUND, H. OVERHOF, J. Phys. C4, 42, Suppl. n°10, C4–83, 1981
W. SHOCKLEY, J. BARDEEN, Phys. Rev. 77, 407, 1950
L.V. KELDYSH, G.P. PROSHKO, Sov. Phys. Solid State 5, 12, 2484, 1964
B.J. SHKLOWSKII, A.L. EFROS, Sov. Phys. JETP, 33, 2, 468, 1971
J. TAUC, Mat. Res. Bull. 5, 721, 1970
H. FRITZSCHE, Solid State Com. 9 1813, 1971
B. PISTOULET, J.L. ROBERT, et al. J. Non Cryst. Solids, 29, 29, 1978
B. PISTOULET, P. GIRARD, G. HAMAMDJIAN, J.Appl. Phys. August. 15, 1984
Y. ZOHTA, Solid State Electronics, 16, 1029, 1973
M. ABKOWITZ, P.G.LE COMBER, W.E. SPEAR, Communic. on Phys. 1,175,1796
A.R. LONG, N. BALKAN, J. non Cryst. Solids, 35–36, 415, 1980
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Pistoulet, B., Abdalla, S., Roche, F.M. (1985). A.C. Band Conductivity in Compensated Semiconductors Effect of Potential Fluctuations. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_300
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DOI: https://doi.org/10.1007/978-1-4615-7682-2_300
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