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Investigation of the Si(111) Surface in UHV: Oxidation and the Effect of Surface Phosphorus

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Proceedings of the 17th International Conference on the Physics of Semiconductors

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Abstract

We have studied the initial stages of oxidation, the segregation of phosphorus, and the effect of phosphorus on oxidation of the Si(111) 7 X 7 surface using optical second-harmonic generation. We have also observed a (√3 X √3) R30° LEED pattern for P on Si (111).

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References

  1. H. W. K. Tom, et al., Phys. Rev. Lett. 52, 348 (1984).

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  2. S. A. Schwarz, et al., J. Electrochem. Soc. 128, 1101 (1981).

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  3. J. Onsgaard, et al., Surf. Sci. 99, 112 (1980) and references therein.

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  4. R. S. Bauer, et al., Proc. Int’l. Conf. SiO 2 and Its Interfaces, eds. S. T. Pantelides (Pergamon, New York. 1978), p. 401.

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  5. D. W. Bullett and P. C. Stephenson, Solid State Commun. 45, 47 (1983).

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Author information

Authors and Affiliations

  1. Departments of Physics and Chemistry; Lawrence Berkeley Laboratory, Materials and Molecular Research Division, University of California, 94720, Berkeley, CA, USA

    H. W. K. Tom, X. D. Zhu, Y. R. Shen & G. A. Somorjai

Authors
  1. H. W. K. Tom
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  2. X. D. Zhu
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  3. Y. R. Shen
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  4. G. A. Somorjai
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Editor information

Editors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, 94340, Palo Alto, CA, USA

    James D. Chadi

  2. Department of Applied Physics W.W. Hansen Laboratories, Stanford University, 94305, Stanford, CA, USA

    Walter A. Harrison

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© 1985 Springer Science+Business Media New York

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Tom, H.W.K., Zhu, X.D., Shen, Y.R., Somorjai, G.A. (1985). Investigation of the Si(111) Surface in UHV: Oxidation and the Effect of Surface Phosphorus. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_21

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  • DOI: https://doi.org/10.1007/978-1-4615-7682-2_21

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4615-7684-6

  • Online ISBN: 978-1-4615-7682-2

  • eBook Packages: Springer Book Archive

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