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Low-Energy Electron Diffraction Study of the (2x2) GaAs(111) Surface

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Proceedings of the 17th International Conference on the Physics of Semiconductors

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Abstract

We have used a multiple scattering theory of low-energy electron diffraction to determine the geometric structure of (2x2) GaAs(111). We find that there is one vacancy per (2x2) unit cell. Orbital rehybridization of the type sp3 → sp2 for group III atoms and sp3 → s, Px,y,z for group V atoms are responsible for the reconstruction mechanism.

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References

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Author information

Author notes

  1. G. Xu

    Present address: Dept. of Physics, Zhongshan University, Guangzhou, China

  2. Y. Huang

    Present address: Institute of Physics, C.A.S., Beijing, China

  3. B. W. Lee

    Present address: Hua Ko Electronics Co. Ltd., Hong Kong, China

Authors and Affiliations

  1. Laboratory for Surface Studies and Department of Physics, University of Wisconsin-Milwaukee, 53201, Milwaukee, WI, USA

    G. Xu, Y. Huang, W. N. Mei, B. W. Lee & S. Y. Tong

Authors
  1. G. Xu
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  2. Y. Huang
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  3. W. N. Mei
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  4. B. W. Lee
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  5. S. Y. Tong
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Editor information

Editors and Affiliations

  1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, 94340, Palo Alto, CA, USA

    James D. Chadi

  2. Department of Applied Physics W.W. Hansen Laboratories, Stanford University, 94305, Stanford, CA, USA

    Walter A. Harrison

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© 1985 Springer Science+Business Media New York

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Xu, G., Huang, Y., Mei, W.N., Lee, B.W., Tong, S.Y. (1985). Low-Energy Electron Diffraction Study of the (2x2) GaAs(111) Surface. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_15

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  • DOI: https://doi.org/10.1007/978-1-4615-7682-2_15

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4615-7684-6

  • Online ISBN: 978-1-4615-7682-2

  • eBook Packages: Springer Book Archive

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