Abstract
The recombination of photoexcited carriers is suppressed in n-i-p-i doping superlattices with dn=di=dp=d (50 Å<d<800 Å) due to the spatial separation of electrons and holes by the built in fields. This leads to a substantially enhanced infrared-induced photoconductivity at T=15K even 1000 s after the carriers are created.
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References
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Hundhausen, M., Ley, L., Carius, R. (1985). Carrier Recombination in Doping Superlattices of a-Si:H. In: Chadi, J.D., Harrison, W.A. (eds) Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4615-7682-2_108
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DOI: https://doi.org/10.1007/978-1-4615-7682-2_108
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