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The Interband Transition Region: Crystalline Materials

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Optical Properties of Crystalline and Amorphous Semiconductors

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Abstract

The optical constants in the interband transition region of semiconductors depend fundamentally on the electronic energy-band structure of the semiconductors. The relation between the energy-band structure and ε2(E) can be given by [1] where u is the combined DOS mass, the Dirac 5 function represents the spectral joint DOS between the valence- [Evk)] and conduction-band [Ec(k)] states differing by the energy E=hω of the incident light, Fcv(K:) is the momentum-matrix element between the valence- and conduction-band states, and the integration is performed over the first BZ. There have been several analytic models that can be used to explain ε(E) spectra in the interband transition region of semiconductors. In the following, we briefly review such analytic models, namely HOA, SCP, and MDF, and show the analyzed results of ε(E) for GaAs using these models.

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Authors and Affiliations

  1. Department of Electronic Engineering, Gunma University, Japan

    Sadao Adachi

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  1. Sadao Adachi
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Adachi, S. (1999). The Interband Transition Region: Crystalline Materials. In: Optical Properties of Crystalline and Amorphous Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-5241-3_3

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  • DOI: https://doi.org/10.1007/978-1-4615-5241-3_3

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-7389-6

  • Online ISBN: 978-1-4615-5241-3

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