Abstract
Recent advances in semiconductor lasers has resulted in their utilization in several surgical techniques including endoscopic photocoagulation, and tissue welding. Their utilization is a consequence of the high power, high efficiency, high reliability, low price, and compact size, of which the combination is unique to semiconductor lasers. In this article I will try to outline the advantages of semiconductor lasers in general and then deal with specific characteristics of several laser diodes.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
G.H.B. Thompson, “Physics of Semiconductor Laser Devices”, S. Wiley & Sons, 1980.
H.C. Casey, M. B. Pannish, “Heterostructure Lasers”, Academic Press, 1978.
H. Kressel, J.K. Butler, “Semiconductor Lasers and Heterojunction LED’s”, Academic Press, 1977.
G.P. Agrawal, N.K. Dutta, “Long Wavelength Semiconductor Lasers”, Van Nostrand Reinhold, 1986.
W.T. Tsang, “Extension of lasering wavelengths beyond 0.87 µm in GaAs/AlGaAs double heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy”, Appl. Phys. Lett., 38:661 (1981).
D.F. Welch, C.F. Schaus, S. Sun, P.L. Gourley, and W. Streifer, Gain characteristics of strained quantum well lasers, Appl. Phys. Lett., 56:10 (1990).
D.F. Welch, M. Cardinal, W. Streifer, and D. Scifres, High-power single mode InGaAs/AlGaAs laser diodes at 910 nm, Electron. Lett., 26:233 (1990).
J.W. Matthews, and A.E. Blakeslee, Defects in epitaxial multilayers, I: Misfit dislocation, J. Cryst. Growth, 27:118 (1974).
I.J. Fritz, S.T. Picraux, L.R. Dawson, T.J. Drummond, W.D. Laidig, and N.G. Anderson, Dependence of critical layer thickness on strain for InxGa1-xAs/GaAs strained-layer superlattices, Appl. Phys. Lett., 46:967 (1985).
D.F. Welch, M. Cardinal, W. Streifer, D.R.Scifres, High brightness, high efficiency, single quantum well laser diode array, Electron. Lett., 23:1240 (1987).
D.F. Welch, W. Streifer, D.R. Scifres, High power single mode laser diodes, in: “Laser Diode Technology and Applications”, SPIE Proceedings vol.1043 (1989), pag. 54.
M. Sakamoto, D.F. Welch, J.G. Endriz, D.R. Scifres, W. Streifer, 76 Watt continuous-wave monolithic laser diode arrays, Appl. Phys. Lett. 54:2299 (1989).
Kazuhiko Itaya, Masayuki Ishikawa, Hazime Okuda, Yukio Watanabe, Koichi Nitta, Hideo Shiozawa, and Yutaka Uematsu, Effects of facet coating on the reliability of InGaAIP visible light laser diodes, Appl. Phys. Lett. 53:1363 (1988).
T. Tanaka, S. Minagawa, and T. Kajimura, Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer, Appl. Phys. Lett. 54:1391 (1989).
T.H. Chong, K. Kishino, Remarkable reduction of threshold current density of 670 nm GaInAsP/AlGaAs visible lasers by increasing al content of AlGaAs cladding layers, Electron. Lett., 25:761 (1989).
W. Kozlovsky, C.D. Nabors, and R. Byer, Efficient second harmonic generation of a diode-laser-pumped CW Nd:YAG laser using monolithic MgO:LiNb03 external resonant cavities, IEEE J. Quantum Electron., 24:913 (1988).
L. Goldberg, M.K. Chun, Efficient generation at 421 nm by resonantly enhanced doubling of GaAlAs laser diode array emission, Appl. Phys. Lett., 55:218 (1989).
D.F. Welch, B. Chan, W. Streifer, D.S. Scifres, High power, 8w cw, single quantum well laser diode array, Electron. Lett., 24:113 (1988).
W. Streifer, D.R. Scifres, G.L. Harnagel, D.F. Welch, J. Berger, M. Sakamoto, Advances in solid state pumps, IEEE J. Quantum Electron., 24:883 (1988).
D.R. Scifres, D. Lindstrom, R.D. Burnham, W. Streifer, Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror, Elect. Lett. 19:169 (1983).
T.R. Chen, D. Mehuys, Y.H. Zhung, M. Mittelstein, H. Wang, P.L. Derry, M. Kajanto, and A. Yariv, Broad-area tandem semiconductor laser, Appl. Phys. Lett., 53:1468 (1988).
D.F. Welch, R. Craig, W. Streifer, D. Scifres, High reliability, high power, single mode laser diodes, to be published in Electronic Letters (1990).
W.T. Tsang, Extremely low threshold (AlGa)As graded-index waveguide separate confinement heterostructure lasers grown by molecular beam epitaxy, Appl. Phys. Lett., 40:217 (1982).
H. Nakashima, S. Semura, T. Ohta, T. and T., AlGaAs window stripe buried multiquantum well lasers, Japan. J. Appl., Vol. 24, No. 8, August (1985).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1991 Springer Science+Business Media New York
About this chapter
Cite this chapter
Welch, D.F. (1991). Properties of High Power Semiconductor Lasers. In: Pratesi, R. (eds) Optronic Techniques in Diagnostic and Therapeutic Medicine. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3766-3_1
Download citation
DOI: https://doi.org/10.1007/978-1-4615-3766-3_1
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-6678-2
Online ISBN: 978-1-4615-3766-3
eBook Packages: Springer Book Archive