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Quantum-sized microstructures of wide bandgap II–VI semiconductors

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Widegap II–VI Compounds for Opto-electronic Applications

Part of the book series: Electronic Materials Series ((EMAT,volume 1))

Abstract

The past several years have seen dramatic advances in epitaxial growth techniques which have led the way to an improved understanding of the properties of II–VI materials and their alloys. The renewed interest in the family of II–VI semiconductors is thus directly related to their successful epitaxial growth by molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), metal–organic chemical vapour deposition (MOCVD), and metal–organic molecular beam epitaxy (MOMBE). These growth techniques have resulted in the creation of sophisticated heterojunctions, multiple quantum wells, and strained-layer superlattices composed of II–VI/II–VI and II–VI/III–V multilayered materials. Multiple quantum well and superlattice structures composed of wide bandgap II–VI compounds were first realized in the mid-1980s. Subsequent years have seen a rapid advance in the understanding of the microstructural, optical, and electrical properties of these structures. The objective of the chapter is to provide an overview of the research activity in the area of the non-equilibrium growth of II-VI-based structures, having emphasis on MBE, and with selected recent achievements highlighted.

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Authors
  1. M. Kobayashi
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  2. R. L. Gunshor
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  3. L. A. Kolodziejski
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Editors and Affiliations

  1. Department of Metallurgy and Materials Science and Department of Electrical Engineering, University of Toronto, Ontario, Canada

    Harry E. Ruda (Assistant Professor) (Assistant Professor)

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Kobayashi, M., Gunshor, R.L., Kolodziejski, L.A. (1992). Quantum-sized microstructures of wide bandgap II–VI semiconductors. In: Ruda, H.E. (eds) Widegap II–VI Compounds for Opto-electronic Applications. Electronic Materials Series, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-3486-0_6

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  • DOI: https://doi.org/10.1007/978-1-4615-3486-0_6

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