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MOS Transistor Characteristics

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Electrical Characterization of Silicon-on-Insulator Materials and Devices

Part of the book series: The Springer International Series in Engineering and Computer Science ((SECS,volume 305))

Abstract

MOS transistor characteristics represent an invaluable and easy-to-access source of information on the intrinsic properties of SOI structures as well as on the process-induced defects. In this chapter, attention will be given to the most important phenomena and parameters of SOI—MOS transistors. We will focus on the ohmic region of operation. It is clear that the standard expressions existing for bulk-Si—MOSFETs apply, without any major modification, to SOI transistors, provided that they have a contact with the Si film (five-terminal devices) and are fabricated in non-fully depleted films (relatively thick or highly doped). Although the back gate-bias acts as an extra experimental parameter, its practical influence on the operation of partially depleted MOSFETs is rather limited.

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Authors and Affiliations

  1. Polytechnic Institute of Grenoble, France

    Sorin Cristoloveanu

  2. University of Florida, USA

    Sheng S. Li

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  1. Sorin Cristoloveanu
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Cristoloveanu, S., Li, S.S. (1995). MOS Transistor Characteristics. In: Electrical Characterization of Silicon-on-Insulator Materials and Devices. The Springer International Series in Engineering and Computer Science, vol 305. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2245-4_8

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  • DOI: https://doi.org/10.1007/978-1-4615-2245-4_8

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