Abstract
More and more attention has been devoted to the thermal and electrical stability of metal–dielectric interfaces in microelectronic devices. One of the major driving forces is the need to understand the mechanisms of dielectric breakdown with different metal–dielectric interfaces. A dielectric will always break down under severe stress, but an unstable metal–dielectric interface will generally cause an early breakdown and thereby shorten the dielectric lifetime. Therefore, it is important to understand the link behind dielectric degradation and interface stability in order to accurately estimate the operating lifetime of electronic devices. Here we will discuss some of the proposed mechanisms regarding this issue, and correlate them with the thermal and electrical stability results of the interfaces presented in the previous chapters.
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References
I.-C. Chen, S.E. Holland, C. Hu, Electrical breakdown in thin gate and tunneling oxides. IEEE J. Solid-St. Circ. 20(1), 333–342 (1985)
J.W. McPherson, H.C. Mogul, Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films. J. Appl. Phys. 84, 1513–1523 (1998)
J.W. McPherson, Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data. J. Appl. Phys. 95(12), 8101–8109 (2004)
J.W. McPherson, R.B. Khamankar, A. Shanware, Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics. J. Appl. Phys. 88(9), 5351–5359 (2000)
J. Lee, I.C. Chen, C. Hu, Statistical modeling of silicon dioxide reliability. in IRPS, vol. 26, pp. 131–138 (1988)
J.R. Lloyd, E. Liniger, T.-M. Shaw, Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectric. J. Appl. Phys. 98(8), 084109 (2005)
J. McPherson, V. Reddy, K. Banerjee, L. Huy, Comparison of E and 1/E TDDB models for SiO 2 under long-term/low-field test conditions. in IEDM Technical Digest, (1998), pp. 171–174
R. Gonella, Key reliability issues for copper integration in damascene architecture. Microelectron. Eng. 55(1–4), 245–255 (2001)
L. Zhao, Z. Tökei, K. Croes, C.J. Wilson, M. Baklanov, G.P. Beyer, C. Claeys, Direct observation of the 1/E dependence of time dependent dielectric breakdown in the presence of copper. Appl. Phys. Lett. 98, 032107 (1–3) (2011)
F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, J. Lloyd, R. Kontra, J. Aitken, A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development. inIRPS, vol. 44, pp. 46–53 (2006)
N. Suzumura, S. Yamamoto, D. Kodama, K. Makabe, J. Komori, E. Murakami, S. Maegawa, K. Kubota, A new TDDB degradation model based on Cu ion drift in Cu interconnect dielectrics. in IRPS, vol. 44, pp. 484–489 (2006)
A.S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967), p. 37
W. Wu, X. Duan, J.S. Yuan, Modeling of time-dependent dielectric breakdown in copper metallization. IEEE Trans. Device Mater Rel. 3(2), 26–30 (2003)
R.S. Achanta, W.N. Gill, J.L. Plawsky, Copper ion drift in integrated circuits: effect of boundary conditions on reliability and breakdown of low-k dielectric. J. Appl. Phys. 103(1), 014907 (2008)
R.S. Achanta, J.L. Plawsky, W.N. Gill, A time dependent dielectric breakdown model for field accelerated low-k breakdown due to copper ions. Appl. Phys. Lett. 91(23), 234106 (2007)
J. Kim, E.T. Ogawa, J.W. McPherson, Time dependent dielectric breakdown characteristics of low-k dielectric (SiOC) over a wide range of test areas and electric fields. in IRPS, vol. 45, pp. 399–404 (2007)
M. He, S. Novak, L. Vanamurthy, H. Bakhru, J. Plawsky, T.-M. Lu, Cu penetration into low-k dielectric during deposition and bias-temperature stress. Appl. Phys. Lett. 97(25), 252901 (2010)
K. Maex, M.R. Baklanov, D. Shamiryan, F. lacopi, S.H. Brongersma, Z.S. Yanovitskaya, Low dielectric constant materials for microelectronics. J. Appl. Phys. 93(11), 8793–8841 (2003)
C. Jezewski, W.A. Lanford, J.J. Senkevich, C.J. Wiegand, A. Mallikarjunan, D. Lu, G.-C. Wang, T.-M. Lu, C. Jin, Molecular Caulking™: a pore sealing chemical vapor deposited polymer for ultra-low k dielectrics. J. Electrochem. Soc. 151(7), F157–F161 (2004)
T. Tsuruoka, K. Terabe, T. Hasegawa, M. Aono, Forming and switching mechanisms of a cation-migration-based oxide resistive memory. Nanotechnology 21(42), 425205 (2010)
J. Pushkar, S.J. Jasbir, A. Mallikarjunan, E.J. Rymaszewski, T.-M. Lu, Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress. Appl. Phys. Lett. 88(14), 143502 (2006)
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He, M., Lu, TM. (2012). Time-Dependent Dielectric Breakdown (TDDB) and Future Directions. In: Metal-Dielectric Interfaces in Gigascale Electronics. Springer Series in Materials Science, vol 157. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-1812-2_9
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DOI: https://doi.org/10.1007/978-1-4614-1812-2_9
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