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Power Package Electrical and Multiple Physics Simulation

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Power Electronic Packaging

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Abstract

The electrical performance (such as electrical resistance, inductance, and fusing current capability) is a key factor for a power electronic product. Many studies, such as the electrical performance of different devices, effect of assembly reflow process on electrical properties and the resistance of a solder joint, have been done to improve a product’s electrical performance (Modeling for defects impact on electrical performance of power packages, 2010; A comparison of electrical performance between a wire bonded and a flip chip CSP package, 2003; Intermetallics 14:1375–1378, 2006; Microelectron Eng 63:363–372, 2002). In recent years, the investigation has been started for the electrical conductivity under the mechanical deformation of a device (Microelectron Reliab 46:589–599, 2006). Package design optimization for electrical performance of a power module by using finite element analysis (FEA) (Package design optimization for electrical performance of a power module using finite element analysis, 2008) has also been presented. Studying the impact of the defect on package electrical performance, especially for the parasitic effect, is very important. It can help to understand the potential root causes and failure mechanisms, as well as to ensure that the electrical performance meets the requirement of product by optimizing the package design and assembly process.

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References

  1. Liu Y, Wu C-L, Liu Y et al (2010) Modeling for defects impact on electrical performance of power packages. In: 60th electronic components & technology conference, Las Vegas, NV

    Google Scholar 

  2. Pan SJ, Kapoor R, Sun AYS, Wang CK, Low HG (2003) A comparison of electrical performance between a wire bonded and a flip chip CSP package. In: Electronics manufacturing technology symposium, San Jose, CA

    Google Scholar 

  3. Noh BI, Koo JM, Kim JW (2006) Effects of number of reflows on the mechanical and electrical properties of BGA package. Intermetallics 14:1375–1378

    Article  Google Scholar 

  4. Liu DS, Ni CY (2002) A study on the electrical resistance of solder joint interconnections. Microelectron Eng 63(4):363–372

    Article  Google Scholar 

  5. Kwon WS, Ham SJ, Park KW (2006) Deformation mechanism and its effect on electrical conductivity of ACF flip chip package under thermal cycling condition: an experimental study. Microelectron Reliab 46:589–599

    Article  Google Scholar 

  6. Erwin IVA, Paek SH, Lee TK (2008) Package design optimization for electrical performance of a power module using finite element analysis. In: Electronics packaging technology conference, Singapore

    Google Scholar 

  7. Liu YM, Carredo MRT, Hu ZP, Liu Y, Luk T, Irving S (2009) Effect of wire bond and die layout on electrical performance of power packages. In: EuroSimE 2009, Delft, The Netherlands

    Google Scholar 

  8. Fairchild application report (2000) AN9010, Mosfet Basics (2000), South Portland, ME 04106, USA

    Google Scholar 

  9. Ancajas E, Cabiluna A (2006) Dynamics of power MOSFETs during the unclamped inductive load testing. In: Technical sharing conference, Fairchild Semiconductor Corporation, South San Jose

    Google Scholar 

  10. Carredo MRT (2007) How wirebond and die layout affect product ruggedness. In: Technical sharing conference, Fairchild Semiconductor Corporation, Suzhou, China

    Google Scholar 

  11. Yuan ZF, Liu Y, Irving S, Luk T (2008) Identification and verification by experiment and simulation for the possibility of die cracking induced by UIL test. In: EuroSimE 2008, Freiburg, Germany

    Google Scholar 

  12. Huntington B, Grone AR (1961) Current-induced marker motion in gold wires. J Phys Chem Solids 20:76–87

    Article  Google Scholar 

  13. Blech IA, Meieran ES (1967) Direct transmission electron microscope observations of electrotransport in aluminum films. Appl Phys Lett 11:263–266

    Article  Google Scholar 

  14. Black JR (1969) Electromigration—a brief survey and some recent results. IEEE Trans Electron Devices 16(4):338–347

    Article  Google Scholar 

  15. Tu KN (2003) Recent advances on electromigration in very-large-scale-integration of interconnects. J Appl Phys 94(9):5451–5473

    Article  Google Scholar 

  16. Gan H, Choi WJ, Xu G, Tu KN (2002) Electromigration in solder joints and solder lines. J Miner Metal Mater Soc 54(6):34–37

    Article  Google Scholar 

  17. Chae SH, Zhang X, Chao HL, Lu KH, Ho PS et al (2006) Electromigration lifetime statistics for Pb-free solder joints with Cu and Ni UBM in plastic flip-chip packages. In: 56th ECTC, San Diego, CA, 2006, pp 650–656

    Google Scholar 

  18. Ye H, Basaran C, Hopkins D (2003) Thermomigration in Pb-Sn solder joints under Joule heating during electric current stressing. Appl Phys Lett 82:1045–1047

    Article  Google Scholar 

  19. Basaran C, Lin M (2008) Damage mechanics of electromigration induced failure. Mech Mater 40:66–79

    Article  Google Scholar 

  20. Dalleau D, Weide-Zaage K (2001) Three-dimensional voids simulation in chip-level metallization structures: a contribution to reliability evaluation. Microelectron Reliab 41(9–10):1625–1630

    Google Scholar 

  21. Sasagawa K, Hasegawa M, Saka M, Abe H (2002) Prediction of electromigration failure in passivated polycrystalline line. J Appl Phys 91(11):9005–9014

    Article  Google Scholar 

  22. Sukharev V, Zschech E (2004) A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: effect of interface bonding strength. J Appl Phys 96(11):6337–6343

    Article  Google Scholar 

  23. Tan CM, Hou YJ, Li W (2007) Revisit to the finite element modeling of electromigration for narrow interconnects. J Appl Phys 102(3):1–7

    Article  Google Scholar 

  24. Liu Y, Liang L, Irving S et al (2008) 3D Modeling of electromigration combined with thermal-mechanical effect for IC device and package. Microelectron Reliab 48:811–824

    Article  Google Scholar 

  25. Sarychev ME et al (1999) General model for mechanical stress evolution during electro migration. J Appl Phys 86:3068–3075

    Article  Google Scholar 

  26. Chiang KN, Lee CC (2006) Current crowding induced electromigration I SnAg3.0Cu0.5 microbumps. Appl Phys Lett 88(7):072102

    Article  Google Scholar 

  27. Lai Y-S, Chen K-M, Kao C-L, Lee C-W, Chiu Y-T (2007) Electromigration of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy. Microelectron Reliab 47:1273–1279

    Article  Google Scholar 

  28. Basaran C, Lin M (2007) Electromigration induced strain field simulations for nanoelectronics lead-free solder joints. Int J Solids Struct 44:4909–4924

    Article  MATH  Google Scholar 

  29. Huang J, Tu KN, Gee S, Nguyen L (2005) The effect of electromigration on eutectic SnPb and Pb-free solders in wafer level-chip scale packages. In: SRC TechCon 2005, Portland, OR, 24–26 Oct 2005

    Google Scholar 

  30. Shi Q, Wang ZP, Pang HLJ, Zhou W (1999) Effect of temperature and strain rate on mechanical properties of 63Sn/37Pb solder alloy. Trans ASME J Electron Packaging 121:179–185

    Article  Google Scholar 

  31. Reinikainen O, Marjamaki P, Kivilahti JK (2005) Deformation characteristics and microstructural evolution of SnAgCu solder joints. Deformation characteristics and microstructural evolution of SnAgCu solder joints. In: EuroSime conference proceedings, Berlin, Germany

    Google Scholar 

  32. Ouyang FY, Hyang A, Tu KN (2006) Thermomigration in SnPb composite solder joints and wires. In: 56th ECTC, San Diego, CA, pp 1974–1978

    Google Scholar 

  33. Liu Y, Wang Q, Liang L et al (2009) A new prediction methodology for electromigration-induced solder degradation in a WL-CSP system. In: 59th electronic components & technology conference, San Diego, CA

    Google Scholar 

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Authors and Affiliations

  1. Fairchild Semiconductor Corporation, South Portland, ME, USA

    Yong Liu

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  1. Yong Liu
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Liu, Y. (2012). Power Package Electrical and Multiple Physics Simulation. In: Power Electronic Packaging. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-1053-9_12

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  • DOI: https://doi.org/10.1007/978-1-4614-1053-9_12

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  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4614-1052-2

  • Online ISBN: 978-1-4614-1053-9

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