Abstract
Niobium nitride films are the most hopeful materials for reliable Josephson devices because of high Tc’s and toughness against physical or chemical damages. These films have been prepared by reactive sputtering,1 ion beam sputtering,2 and chemical vapor deposition.3 Then it is generally accepted that a high Tc δ phase NbN is stabilized by impurities including carbon or oxygen. Reactively sputtered niobium carbonitride films have been also investigated with respect to superconductivity in very high field.4 Recently maximum Tc’s of 17.8K were observed in NbC0.15N0.85 5 or NbC0.08N0.92 6 films. All of these films were prepared in ultra high vacuum sputtering systems.
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© 1984 Springer Science+Business Media New York
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Yamamoto, H., Ishii, K., Tanaka, M. (1984). Preparation of NbCxN1−x Thin Films by High Rate Reactive Sputtering. In: Clark, A.F., Reed, R.P. (eds) Advances in Cryogenic Engineering Materials . Advances in Cryogenic Engineering, vol 30. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-9868-4_69
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DOI: https://doi.org/10.1007/978-1-4613-9868-4_69
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