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A Corrected Version of the t-Approximation for Strong Repulsion

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Low Temperature Physics-LT 13

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Abstract

A study has been made of the evolution of localized behavior in the Hubbard model as a function of density for the strongly repulsive case for low to intermediate densities. For few electrons in a band the electrons will be Blochlike no matter how strong the repulsion, while a half-filled band will be localized for very large ratio of repulsion energy to bandwidth. We have studied the situation intermediate between these limits, which can be analyzed clearly in our approach.

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References

  1. J. Kanamori, Prog. Theor. Phys. 30, 275 (1963).

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  2. G. Horwitz, Rev. Mod. Phys. 40, 807 (1968).

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Author information

Authors and Affiliations

  1. Department of Theoretical Physics, Hebrew University, Jerusalem, Israel

    G. Horwitz & D. Jacobi

Authors
  1. G. Horwitz
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  2. D. Jacobi
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Editor information

Editors and Affiliations

  1. University of Colorado, Boulder, Colorado, USA

    K. D. Timmerhaus  & W. J. O’Sullivan  & 

  2. National Science Foundation, Washington, D.C, USA

    K. D. Timmerhaus

  3. Los Alamos Scientific Laboratory, University of California, Los Alamos, New Mexico, USA

    E. F. Hammel

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© 1974 Plenum Press, New York

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Horwitz, G., Jacobi, D. (1974). A Corrected Version of the t-Approximation for Strong Repulsion. In: Timmerhaus, K.D., O’Sullivan, W.J., Hammel, E.F. (eds) Low Temperature Physics-LT 13. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-4520-6_98

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  • DOI: https://doi.org/10.1007/978-1-4613-4520-6_98

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-4522-0

  • Online ISBN: 978-1-4613-4520-6

  • eBook Packages: Springer Book Archive

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