Abstract
Since I976, the LETI (Laboratoire d’Electronique et de Technologie de l’Informatique) studies the performances of NTD-silicon irradiated in different reactors of the CEA (in Grenoble and in Saclay).
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Research supported by the Délégation Générale à la Recherche Scientifique et Technique of the French Government in connection with the french manufacturers of power devices.
A. Senes and G. Sifre, M. Breant - Procedings of the Third International Symposium on Silicon Materials Science and Technology, Semiconductor Silicon (1977).
W.R. Runyan, Silicon Semiconductor Technology, Mc Graw Hill.
R. Sher, Handbook on Nuclear Activation Cross-Sections, I.A.E.A., Vienna (1974).
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© 1981 Plenum Press, New York
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Roche, D., Blanc, F., Vilain, M. (1981). Characterization of NTD Silicon Irradiated in Grenoble Reactor Facilities. In: Guldberg, J. (eds) Neutron-Transmutation-Doped Silicon. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-3261-9_18
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DOI: https://doi.org/10.1007/978-1-4613-3261-9_18
Publisher Name: Springer, Boston, MA
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