Abstract
The selection of starting material for neutron-transmutation doped (NTD) silicon has been described by Janus and Malmros1 for the case where the starting material is entirely of one or the other conductivity type. After defining homogeneity factors for the starting and for the NTD material, the authors derive an expression for the doping factor, which essentially sets a fixed limit on the maximum dopant concentration of the starting material for NTD material of a required homogeneity.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
H. M. Janus and 0. Malmros, Application of Thermal Neutron Irradiation for Large Scale Production of Homogeneous Phosphorus Doping of Float Zone Silicon, IEEE Transactions on Electron Devices, Vol. ED-23, No. 8, August]976, pp. 797–802.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1981 Plenum Press, New York
About this chapter
Cite this chapter
Kramer, H.G. (1981). The Selection of Starting Material for Neutron-Transmutation Doped Silicon. In: Guldberg, J. (eds) Neutron-Transmutation-Doped Silicon. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-3261-9_14
Download citation
DOI: https://doi.org/10.1007/978-1-4613-3261-9_14
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-3263-3
Online ISBN: 978-1-4613-3261-9
eBook Packages: Springer Book Archive