Abstract
The physical mechanisms determining the operating conditions of millimeter-waves IMPATT diodes are first reviewed. It is shown, within the framework of numerical simulations that the non-steady state feature of carrier generation and transport induce additional phenomena which might considerably change and often reduce the high frequency performances of this device. Lastly, with the acquired understanding, a discussion of the various means which could be used to improve the performances, is presented.
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© 1984 Plenum Press, New York
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Lippens, D., Constant, E., Friscourt, M.R., Rolland, P.A., Salmer, G. (1984). Millimeter Impatt Diodes. In: Grubin, H.L., Hess, K., Iafrate, G.J., Ferry, D.K. (eds) The Physics of Submicron Structures. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2777-6_8
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DOI: https://doi.org/10.1007/978-1-4613-2777-6_8
Publisher Name: Springer, Boston, MA
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