Abstract
In CMOS technology, electrical measurements are carried out on a variety of test structure macros at each test stop as outlined in Fig. 1.3. The data collected from these measurements are analyzed and the information used for technology development, routine process monitoring, and product debug. The number of measured parameters from a single macro on one reticle field repeated across a wafer may be anywhere from less than ten to over a few hundreds. With hundreds of wafer starts per day, a large amount of data are collected even if measurements are made only on selected sites on a subset of wafers. Data are stored in a centralized database and software tools are made available for data manipulation and graphics.
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Bhushan, M., Ketchen, M.B. (2011). Data Analysis. In: Microelectronic Test Structures for CMOS Technology. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-9377-9_10
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DOI: https://doi.org/10.1007/978-1-4419-9377-9_10
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