Summary
In previous work, InGaAs single quantum well structures had been grown on (100) InP, 4° misoriented towards (111). Transmission electron microscopy had shown that the misorientation of the substrate gave rise to a development of lateral contrast modulation that initiated on the InAlAs tensile buffer layer, and it was suggested that contrast modulation could be related to In-rich or Al-rich regions. In the present work, contrast modulation has also been observed in high angle annular dark field imaging; an electron energy loss spectroscopy study of the evolution of plasmon position also supports the hypothesis of compositional modulation.
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Estradé, S., Arbiol, J., Peiró, F. (2008). EELS and STEM Assessment of Composition Modulation in InAlAs Tensile Buffer Layers of InGaAs /InAlAs /(100)InP Structures. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_60
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_60
Publisher Name: Springer, Dordrecht
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