Summary
Scanning transmission electron microscopy has been used to investigate the composition of nickel seeds which promote the columnar growth of AlGaN / GaN nanowires deposited by molecular beam epitaxy (MBE) on sapphire. The nickel distribution along the nanowires was investigated by both X-ray and electron-energy-loss spectroscopy. Gallium was observed in nickel seeds at the nanowires growth tips. No aluminium was detected and a minimal presence of nitrogen was observed in the nickel seeds, which exhibit a nickel oxide surface attributed to oxidation following removal from the MBE growth system.
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Lari, L. et al. (2008). Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_48
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_48
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