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Impact of Doping Density in Short-Wavelength InP-Based Strain-Compensated Quantum-Cascade Lasers

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Narrow Gap Semiconductors 2007

Abstract

The authors present the effect of injector doping concentrations between 0.7 × 1016 cm−3 and 3.9 × 1017 cm−3 on the performance of short-wavelength InP-based quantum-cascades lasers (QCL) emitting around 3.8 μm. For the maximum operation current an almost linear dependence on the doping is obtained. However, the maximum emitted optical power, the highest wall-plug efficiency as well as the maximum operating temperature are found for a doping density of 1.7 × 1017 cm−3. Characterization of the lowest doped sample indicated an unstable operation of the QCLs.

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References

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Mujagić, E. et al. (2008). Impact of Doping Density in Short-Wavelength InP-Based Strain-Compensated Quantum-Cascade Lasers. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_36

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