Abstract
We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb2 and As2 fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr = 450–320°C) which gives rise to the variation of the emission wavelength within the 3.6–4.0μm range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2, As2) and (Sb4, As4) is also presented.
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References
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Solov’ev, V.A. et al. (2008). InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_31
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_31
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
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