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Phonon Fine Structure in the 1/f Noise of Metals, Semiconductors and Semiconductor Devices

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Noise, Oscillators and Algebraic Randomness

Part of the book series: Lecture Notes in Physics ((LNP,volume 550))

Abstract

Results pointing to phonon participation in the 1/f noise of metals, semiconductors and semiconductor devices are presented. Afine structure corresponding to both bulk and surface phonons is shown to exist in the 1/f noise of different solid-state physical systems. It is described how Phonon Density Of States (PDOS) superposition method can be used to identify surface and bulk equilibrium atomic motions as microscopic 1/f noise sources. Aclose connection between the 1/f noise parameter and PDOS or Eliashberg function is suggested. Examples proving that the temperature dependence of the 1/f noise parameter is the image of the lattice vibration spectrum are given for both metals and semiconductors. Consequently, a simple connection between the activation energy distribution and PDOS is revealed and lattice anharmonicity appears to naturally affect the frequency exponent.

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Authors and Affiliations

  1. Institute of Microtechnology, str. Erou Iancu Nicolae 32B, PO Box 38-160, 72996, Bucharest, Romania

    Mihai N. Mihaila

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  1. Mihai N. Mihaila
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  1. Laboratoire de Physique et Merologie, des Oscillateurs du CNRS, 32 Avenue de l’Observatoire, 25044, Besançon Cedex, France

    Michel Planat

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Mihaila, M.N. (2000). Phonon Fine Structure in the 1/f Noise of Metals, Semiconductors and Semiconductor Devices. In: Planat, M. (eds) Noise, Oscillators and Algebraic Randomness. Lecture Notes in Physics, vol 550. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45463-2_11

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  • DOI: https://doi.org/10.1007/3-540-45463-2_11

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