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Sub-Ångstrom and 3-dimensional STEM for semiconductor research

  • Conference paper
Microscopy of Semiconducting Materials

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

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Abstract

Electron microscopy has been one of the foremost tools for analysis of semiconducting materials and, in turn, benefits from the processing power provided by faster computers. As semiconductor devices become ever smaller and faster, the shrinking of components means that even single dopant or impurity atoms can significantly affect device performance. Thus the enhanced resolution, sensitivity and new techniques enabled by aberration correction should ensure that this relationship continues.

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Author information

Authors and Affiliations

  1. Oak Ridge National Laboratory, Condensed Matter Sciences Division, Mailstop 6031, Oak Ridge, TN, 37831, USA

    A R Lupini, M F Chisholm, M Varela, K Van Benthem, A Y Borisevich, Y Peng, W H Sides, J T Luck & S J Pennycook

Authors
  1. A R Lupini
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  2. M F Chisholm
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  3. M Varela
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  4. K Van Benthem
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  5. A Y Borisevich
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  6. Y Peng
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  7. W H Sides
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  8. J T Luck
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  9. S J Pennycook
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Editor information

Editors and Affiliations

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

    A. G. Cullis

  2. Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK

    J. L. Hutchison

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© 2005 Springer-Verlag Berlin Heidelberg

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Lupini, A.R. et al. (2005). Sub-Ångstrom and 3-dimensional STEM for semiconductor research. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_97

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