Abstract
Narrow gap semiconductors can have nonlinear third order susceptibilities Ξ(3) (ω:ω,−ω,ω) as high as 1.0 esu. The microscopic processes responsible for this have been identified as band-gap resonant saturation caused by laser-excited excess carriers. Signal processing devices operating at milliwatt powers are a consequence.
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© 1982 Springer-Verlag
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Smith, S.D. (1982). Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_17
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DOI: https://doi.org/10.1007/3-540-11191-3_17
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