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Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors

  • 4. Optics
  • Conference paper
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Physics of Narrow Gap Semiconductors

Part of the book series: Lecture Notes in Physics ((LNP,volume 152))

Abstract

Narrow gap semiconductors can have nonlinear third order susceptibilities Ξ(3) (ω:ω,−ω,ω) as high as 1.0 esu. The microscopic processes responsible for this have been identified as band-gap resonant saturation caused by laser-excited excess carriers. Signal processing devices operating at milliwatt powers are a consequence.

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E. Gornik H. Heinrich L. Palmetshofer

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© 1982 Springer-Verlag

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Smith, S.D. (1982). Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors. In: Gornik, E., Heinrich, H., Palmetshofer, L. (eds) Physics of Narrow Gap Semiconductors. Lecture Notes in Physics, vol 152. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11191-3_17

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  • DOI: https://doi.org/10.1007/3-540-11191-3_17

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  • Online ISBN: 978-3-540-38978-1

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