Conclusion
The role of the initial surface on ALD of WCxNy can be investigated using SAMs as model substrates. SAMs provide films of known chemical composition with macroscopically well-ordered surfaces. With thermal stability extending from 500–600° C, such substrates withstand multiple cycles of ALD at 300°C. Comparis of WCxNy grown on SAMs with methyl-, bromo-, and cyano-terminal groups and alkyl chain lengths ranging from 7 to 17 methylene units shows differences in tungsten coverage, film thickness, density, resistivity, and interfacial and surface structure. The terminal group and the alkyl chain length both influence the observed growth behaviour. The cyano-terminated SAM is most promising for WCxNy growth. Overall, this study demonstrates that via tunable structure and surface chemistry, SAMs represent a novel approach to surface engineering and provide model substrates for atomic layer deposition.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
International Technology Roadmap for Semiconductors (ITRS), Semiconductor International Association (2003), http://public.itrs.net/.
P. Murarka, Mater. Sci. Eng. R19, 87 (1997).
K. Maex, M.R. Baklanov, D. Shamiryan, F. Lacopi, S.H. Brongersma, Z.S. Yanovitskaya, J. Appl. Phys. 93, 8793 (2003).
D. Volger, P. Doe, Sol. State Technol. 46, 35 (2003).
M. Ritala, M. Leskelä, Handbook of Thin Film Materials, edited by H.S. Nalwa, 1, 103–159 Academic Press, San Diego, (2002).
A. Satta, A. Vantomme, J. Schuhmacher, C.M. Whelan, V. Sutcliffe, K. Maex, Appl. Phys. Lett. 84, 4571 (2004).
G.L. Fisher, A.E. Hooper, R.L. Opila, D.L. Allara, N. Winograd, J. Phys. Chem. B 104, 3267 (2000).
P.G. Ganesan, A.P. Singh, G. Ramanath, Appl. Phys. Lett. 85, 579 (2004).
C.M. Whelan, J. Ghijsen, J.-J. Pireaux, K. Maex, Thin Solid Films 464–465, 388 (2004).
F. Schreiber, Prog. Surf. Sci. 65, 151 (2000) and references therein.
P.E. Laibinis, G.M. Whitesides, J. Am. Chem. Soc. 114, 1990 (1992).
M.-T. Lee, G.S. Ferguson, Langmuir 17, 762 (2001).
C.M. Whelan, A.-C. Demas, J. Schuhmacher, L. Carbonell, K. Maex, Mater. Res. Soc. Symp. Proc. 812, F2.2.1 (2004).
G.J. Kluth, M.M. Sung, R. Maboudian, Langmuir 13, 3775 (1997).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2005 Springer-Verlag London Limited
About this chapter
Cite this chapter
Whelan, C.M. et al. (2005). Surface Engineering Using Self-assembled Monolayers: Model Substrates for Atomic-layer Deposition. In: Zschech, E., Whelan, C., Mikolajick, T. (eds) Materials for Information Technology. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/1-84628-235-7_7
Download citation
DOI: https://doi.org/10.1007/1-84628-235-7_7
Publisher Name: Springer, London
Print ISBN: 978-1-85233-941-8
Online ISBN: 978-1-84628-235-5
eBook Packages: EngineeringEngineering (R0)