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Materials Requirements for Magnetic Random-Access Memory (MRAM) Devices

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Thin Films and Heterostructures for Oxide Electronics

Part of the book series: Multifunctional Thin Film Series ((MUTF))

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Authors and Affiliations

  1. Infineon Technologies, ALTIS Semiconductor, 224 Boulevard John Kennedy, 91105, Corbeil-Essonnes, France

    Wolfgang Raberg

  2. Center for Materials for Information Technology (MINT), Dept. of Chemistry, Chemical and Biological Engineering, The University of Alabama, Tuscaloosa, Al., 35487, USA

    Arunava Gupta

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  1. Wolfgang Raberg
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Raberg, W., Gupta, A. (2005). Materials Requirements for Magnetic Random-Access Memory (MRAM) Devices. In: Thin Films and Heterostructures for Oxide Electronics. Multifunctional Thin Film Series. Springer, Boston, MA. https://doi.org/10.1007/0-387-26089-7_4

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