Abstract
BiCMOS for analog circuits is finding applications for which the high transconductance, low noise, high output resistance, and additional speed of the bipolar devices yield a performance not easily obtained through a CMOS technology alone. However, for BiCMOS to remain a viable alternative for these applications, costs must be kept low. Our BiCMOS approach, MBiC (Modular BiCMOS), starts with a state-of- the-art CMOS technology and adds a bipolar transistor in a modular fashion while minimizing additional process steps. Using process steps such as high-energy implantation in place of epitaxy over a heavily doped sub-collector, and amorphous-Si refill techniques under the extrinsic base region, we produce Si homo-junction devices with cutoff frequencies of about 30 GHz with only three additional masking levels. Using similar device structures with the same “CMOS first” philosophy, we also fabricated Si/SiGe hetero-junction bipolar transistors with a cut off frequency of 54 GHz.
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References
Y.-F. Chyan, M. S. Carroll, T. G. Ivanov, A. S. Chen, W. J. Nagy, S. Chaudhry, R. W. Dail, V. D. Archer, K. K. Ng, S. Martin, M. Oh, M. R. Frei, I. C. Kizilyalli, R. Y. Huang, M. J. Thoma, C. A. King, W. T. Cochran, and K. H. Lee, in Proc. of the Bipolar/BiCMOS Circuits and Technolgy Meeting, pp. 128–129, (1998).
Y. Kinoshita, K. Imai, H. Yoshida, H. Suzuki, T. Tatsumi, and T. Yamazaki, in IEDM Tech. Digest, pp. 441–444, (1994).
M. Ugajin, J. Kodate, Y. Kobayashi, S. Konaka, and T. Sakai, in IEDM Tech. Digest, pp. 735–738, (1995).
J. Liu, Y.-C. Tai, J. Lee, K.-C. Pong, Y. Zohar, and C.-M. Ho, in Proceedings of IEEE Micro Electro Mechanical Systems, Ft. Lauderdale, FL, 1993 (IEEE), pp. 71–76.
D. J. Monk, D. S. Soane, and R. T. Howe, “Hydrofluoric Acid Etching of Silicon Dioxide Sacrificial Layers”, J. Electrochem. Soc., vol. 141, pp. 264–269, (1994).
G. Timp, A. Agarwal, F. H. Bauman, T. Boone, M. Buonanno, R. Cirelli, V. Donnelly, M. Foad, D. Grant, M. Green, H. Gossman, S. Hillenius, J. Jackson, D. Jacobson, R. Kleiman, A. Kornblit, F. Klemens, J. T.-C. Lee, W. Mansfield, S. Moccio, A. Murrell, M. O’Malley, J. Rosamilia, J. Sepjeta, P. Silverman, T. Sorsch, W. W. Tai, D. Tennant, H. Vuong, and B. Weir, in IEDM Tech. Digest, pp. 930–931, (1997).
E. Kim and G. M. Whitesides, “Imbibition and flow of wetting liquids in noncircular capillaries”, J. Phys. Chem. B, vol. 101, pp. 855–863, (1997).
E. Kasper, H. J. Herzog, and H. Kibbel, “A one-dimensional SiGe superlattice grown by UHV epitaxy”, Appl. Phys., vol. 8, pp. 199–205, (1975).
E. Kasper and W. Pabst, “Profiling of SiGe superlattices by He backscattering”, Thin Solid Films, vol. 37, pp. L5–L7, (1976).
E. Kasper and H. J. Herzog, “Elastic and misfit dislocation density in Si0.92Ge0.08 films on Si substrates”, Thin Solid Films, vol. 44, pp. 357–370, (1977).
J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, “Pseudomorphic growth of GexSi1–x on silicon by molecular beam epitaxy”, Appl. Phys. Lett., vol. 44, pp. 102–104, (1983).
R. People, “Indirect band gap of coherently strained Si1–xGex bulk alloys on <100> silicon substrates”, Phys. Rev. B, vol. 32, pp. 1405–1408, (1985).
R. Braunstein, A. R. Moore, and F. Herman, “Intrinsic optical absorption in germanium-silicon alloys”, Phys. Rev., vol. 109, pp. 695–710, (1958).
G. L. Patton, D. L. Harame, J. M. C. Stork, B. S. Meyerson, G. J. Scilla, and E. Ganin, in Symp. on VLSI Technol. Dig. Tech. Papers, pp. 95–96, (1989).
G. L. Patton, J. H. Comfort, B. S. Meyerson, E. F. Crabbé, G. J. Scilla, E. D. Fresart, J. M. C. Stork, J. Y.-C. Sun, D. L. Harame, and J. N. Burghartz, “75-GHz fT SiGe-base heterojunction bipolar transistors”, IEEE Electron Dev. Lett., vol. 11, pp. 171–173, (1990).
T. I. Kamins, K. Nauka, J. B. Kruger, J. L. Hoyt, C. A. King, D. B. Noble, C. M. Gronet, and J. F. Gibbons, “Small-geometry, high-performance, Si-Si1-xGex heterojunction bipolar transistors”, IEEE Electron Dev. Lett., vol. 10, pp. 503–505, (1989).
A. Schüppen, U. Erben, A. Gruhle, H. Kibbel, H. Schumacher, and U. König, in IEDM Tech. Digest, pp. 743–746, (1995).
A. Schüppen, A. Gruhle, U. Erben, H. Kibbel, and U. König, in IEDM Tech. Dig., pp. 377–380, (1994).
J. F. Gibbons, C. M. Gronet, and K. E. Williams, “Limited reaction processing: Silicon epitaxy”, Appl. Phys. Lett., vol. 47, pp. 721–723, (1985).
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King, C.A. (2002). Low-Cost Si and Si/Si1−xGex Heterostructure BiCMOS Technologies for Wireless Applications. In: Helfenstein, M., Moschytz, G.S. (eds) Circuits and Systems for Wireless Communications. Springer, Boston, MA. https://doi.org/10.1007/0-306-47303-8_17
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DOI: https://doi.org/10.1007/0-306-47303-8_17
Publisher Name: Springer, Boston, MA
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