Abstract
The InAs/GaSb family of type II superlattices (T2SL) is the only known infrared (IR) detector material having a theoretically predicted higher performance than HgCdTe. The Auger lifetime has been predicted to be much longer, offering the possibility of much lower dark currents. In this paper the present state of the technology for long-wavelength infrared (LWIR) applications is evaluated by examining the dark current density in LWIR T2SL diodes at 78 K as a function of device cutoff wavelength, and comparing it with the HgCdTe benchmark known as Rule 07. The dark current density remains greater than Rule 07, but it has rapidly decreased in recent years with advancing technology, particularly due to innovative barrier structures.
Similar content being viewed by others
References
M. Razeghi, P.Y. Delaunay, B.M. Nguyen, A. Hood, D. Hoffman, R. McClintock, Y. Wei, E. Michel, V. Nathan, and M.Z. Tidrow, IEEE Lasers Electro-Optics Society Newslett. Vol. 20 (no. 5) (2006), p. 43.
S.D. Gunapala, D.Z. Ting, C.J. Hill, J. Nguyen, A. Soibel, S.B. Rafol, S.A. Keo, J.M. Mumolo, M.C. Lee, J.K. Liu, and B. Yang, IEEE Photonics Technol. Lett. 22, 1856 (2010).
C.H. Grein, P.M. Young, and H. Ehrenreich, Appl. Phys. Lett. 61, 2905 (1992).
C.H. Grein, P.M. Young, M.E. Flatte, and H. Ehrenreich, J. Appl. Phys. 78, 7143 (1995).
M. Razeghi and B.M. Nguyen, Phys. Procedia 3, 1207 (2010).
J.L. Johnson (Ph.D. dissertation, University of California, Santa Barbara, 1996). Key data are quoted in: J.L. Johnson, Proc. SPIE 3948, 118 (2000).
J.L. Johnson, L.A. Samoska, A.C. Gossard, J.L. Merz, M.D. Jack, G.R. Chapman, and K. Kosai, J. Appl. Phys. 80, 1116 (1996).
G.J. Brown, Proc. SPIE 5783, 65 (2005).
D.Z. Ting, C.J. Hill, A. Soibel, J. Nguyen, S.A. Keo, J.M. Mumolo, M.C. Lee, B. Yang, and S.D. Gunapala, Proc. SPIE 7419, 74190B (2009).
C.L. Canedy, E.H. Aifer, J.H. Warner, I. Vurgaftman, E.M. Jackson, J.G. Tischler, S.P. Powell, K. Oliver, J.R. Meyer, and W.E. Tennant, Infrared Phys. Technol. 52, 326 (2009).
B.-M. Nguyen, D. Hoffman, P.-Y. Delaunay, and M. Razeghi, Appl. Phys. Lett. 91, 163511 (2007).
D.Z. Ting, C.J. Hill, A. Soibel, S.A. Keo, J.M. Mumolo, J. Nguyen, and S.D. Gunapala, Appl. Phys. Lett. 95, 023508 (2009).
D.R. Rhiger, R.E. Kvaas, S.F. Harris, B.P. Kolasa, C.J. Hill, and D.Z. Ting, Proc. SPIE 7660, 76601N (2010).
S.H. Han, D.Y. Lee, S.J. Lee, C.Y. Cho, M.K. Kwon, S.P. Lee, D.Y. Noh, D.J. Kim, Y.C. Kim, and S.J. Park, Appl. Phys. Lett. 94, 231123 (2009).
M.A. Kinch, J. Electron. Mater. 29, 809 (2000).
J. Pellegrino and R. DeWames, Proc. SPIE 7298, 7298U (2009).
K. Moazzami, J. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, Y. Fink, and T. Tiwald, J. Electron. Mater. 34, 773 (2005).
C.H. Grein, J. Garland, and M.E. Flatte, J. Electron. Mater. 38, 1800 (2009).
W.E. Tennant, D. Lee, M. Zandian, E. Piquette, and M. Carmody, J. Electron. Mater. 37, 1406 (2008).
W.E. Tennant, J. Electron. Mater. 39, 1030 (2010).
G. Fiorito, G. Gasparrini, and F. Svelto, Infrared Phys. 17, 25 (1977).
K.J. Riley and A.H. Lockwood, Proc. SPIE 217, 206 (1980).
C.C. Wang, J. Vac. Sci. Technol. B 9, 1740 (1991).
T. Tung, L.V. DeArmond, R.F. Herald, P.E. Herning, M.H. Kalisher, D.A. Olson, R.F. Risser, A.P. Stevens, and S.J. Tighe, Proc. SPIE 1735, 109 (1992).
D.R. Rhiger, R.E. Kvaas, S.F. Harris, and C.J. Hill, Infrared Phys. Technol. 52, 304 (2009).
J.P. Omaggio, J.R. Meyer, R.J. Wagner, C.A. Hoffman, M.J. Yang, D.H. Chow, and R.H. Miles, Appl. Phys. Lett. 61, 207 (1992).
H. Shao, W. Li, A. Torfi, D. Moscicka, and W.I. Wang, J. Vac. Sci. Technol. B 24, 2144 (2006).
Q.K. Yang, C. Pfahler, J. Schmitz, W. Pletschen, and F. Fuchs, Proc. SPIE 4999, 448 (2003).
U. Weimar, F. Fuchs, E. Ahlswede, J. Schmitz, W. Pletschen, N. Herres, and M. Walther, Mater. Res. Soc. Symp. Proc. 484, 123 (1998).
M. Walther, F. Fuchs, H. Schneider, J. Fleissner, J. Schmitz, W. Pletschen, J. Braunstein, J. Ziegler, W. Cabanski, P. Koidl, and G. Weimann, Proc. SPIE 3436, 348 (1998).
L. Burkle, F. Fuchs, R. Kiefer, W. Pletschen, R.E. Sah, and J. Schmitz, Mater. Res. Soc. Symp. Proc. 607, 77 (2000).
F. Fuchs, U. Weimar, E. Ahlswede, W. Pletschen, J. Schmitz, and M. Walther, Proc. SPIE 3287, 14 (1998).
C.J. Hill, J.V. Li, J.M. Mumolo, S.D. Gunapala, D.R. Rhiger, R.E. Kvaas, and S.F. Harris, Proc. SPIE 6542, 654205 (2007).
J. Nguyen, A. Soibel, D.Z. Ting, C.J. Hill, M.C. Lee, and S.D. Gunapala, Appl. Phys. Lett. 97, 051108 (2010).
C.L. Canedy, E.H. Aifer, I. Vurgaftman, J.G. Tischler, J.R. Meyer, J.H. Warner, and E.M. Jackson, J. Electron. Mater. 36, 852 (2007).
E.H. Aifer, J.H. Warner, R.R. Stine, I. Vurgaftman, C.L. Canedy, E.M. Jackson, J.G. Tischler, J.R. Meyer, D.Y. Petrovykh, and L.J. Whitman, Proc. SPIE 6542, 654203 (2007).
B.-M. Nguyen, D. Hoffman, P.-Y. Delaunay, and M. Razeghi, Appl. Phys. Lett. 91, 103503 (2007).
P.-Y. Delaunay, A. Hood, B.-M. Nguyen, D. Hoffman, Y. Wei, and M. Razeghi, Appl. Phys. Lett. 91, 091112 (2007).
P.-Y. Delaunay, B.-M. Nguyen, D. Hoffman, A. Hood, E.K. Huang, M. Razeghi, and M.Z. Tidrow, Appl. Phys. Lett. 92, 111112 (2008).
A. Hood, M. Razeghi, V. Nathan, and M.Z. Tidrow, Proc. SPIE 6127, 61270U (2006).
A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi, and M. Tidrow, Appl. Phys. Lett. 84, 2037 (2004).
Y. Wei, A. Hood, H. Yau, V. Yazdanpanah, M. Razeghi, M.Z. Tidrow, and V. Nathan, Appl. Phys. Lett. 86, 091109 (2005).
V. Nathan and M. Razeghi, Proc. SPIE 6542, 654209 (2007).
A. Hood, P.-Y. Delaunay, D. Hoffman, B.-M. Nguyen, Y. Wei, M. Razeghi, and V. Nathan, Appl. Phys. Lett. 90, 233513 (2007).
B.-M. Nguyen, D. Hoffman, Y. Wei, P.-Y. Delaunay, A. Hood, and M. Razeghi, Appl. Phys. Lett. 90, 231108 (2007).
M. Razeghi, B.-M. Nguyen, P.-Y. Delaunay, E.K. Huang, S.A. Pour, P. Manukar, and S. Bogdanov, Proc. SPIE 7467, 74670T (2009).
B.M. Nguyen, S. Bogdanov, S. Abdollahi Pour, and M. Razeghi, Appl. Phys. Lett. 95, 183502 (2009).
B.M. Nguyen, D. Hoffman, E.K. Huang, P.Y. Delaunay, and M. Razeghi, Appl. Phys. Lett. 93, 123502 (2008).
P.Y. Delaunay, B.M. Nguyen, D. Hoffman, E.K. Huang, and M. Razeghi, IEEE J. Quantum Electron. 45, 157 (2009).
P.Y. Delaunay, B.M. Nguyen, D. Hoffman, and M. Razeghi, Proc. SPIE 6542, 654204 (2007).
D.R. Rhiger, R.E. Kvaas, S.F. Harris, R. Bornfreund, Y.N. Thai, C.J. Hill, J.V. Li, S.D. Gunapala, and J.M. Mumolo, Proc. SPIE 6542, 654202 (2007).
S. Mou, J.V. Li, and S.L. Chuang, J. Appl. Phys. 102, 066103 (2007).
L. Zheng, M. Tidrow, L. Aitcheson, J. O’Connor, and S. Brown, Proc. SPIE 7660, 76601E (2010).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Rhiger, D.R. Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe. J. Electron. Mater. 40, 1815–1822 (2011). https://doi.org/10.1007/s11664-011-1653-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-011-1653-6