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ZnO nanorods on ZnO seed layer derived by sol–gel process

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Abstract

Well-aligned ZnO nanorods are obtained by a liquid phase epitaxial growth on the indium-doped tin oxide glass deposited with a ZnO thin film as the seed layer, which is prepared by combining a sol–gel process and a spin coating technique. The effects of water content in the sol and heat treatment temperature on the properties of the ZnO thin film are investigated. Relationship among the seed layer, the growing time, the growing temperature, the concentration of Zn2+ in the solution, the anions in the solution and the resulting ZnO nanorods are discussed in detail. X-ray diffraction analysis and scanning electronic microscopy are employed to characterize the structural and morphological properties of the resulting ZnO nanorods. Results indicate that the ZnO nanorods with a preferred orientation show a single crystal with a wurtzite structure in the direction of [0001], the diameter of the ZnO nanorods seems to depend on the size of the seed grain, while the length of the ZnO nanorods is determined by the growing time and the growing temperature.

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Acknowledgments

This work was supported by the Ministry of Science and Technology of China through 863-project under grant 2009AA03Z218, the Science and Technology Developing Project of Shaanxi Province (2008K01-34), and Xi’an Applied Materials Innovation Fund (XA-AM-200805).

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Authors and Affiliations

  1. Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, 710049, Shaanxi, People’s Republic of China

    Y. T. Yin & W. X. Que

  2. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore

    C. H. Kam

Authors
  1. Y. T. Yin
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  2. W. X. Que
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  3. C. H. Kam
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Correspondence to W. X. Que.

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Yin, Y.T., Que, W.X. & Kam, C.H. ZnO nanorods on ZnO seed layer derived by sol–gel process. J Sol-Gel Sci Technol 53, 605–612 (2010). https://doi.org/10.1007/s10971-009-2138-4

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  • DOI: https://doi.org/10.1007/s10971-009-2138-4

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