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Design and performance analysis of a CNFET-based TCAM cell with dual-chirality selection

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Abstract

The carbon nanotube field-effect transistor (CNFET) is emerging as one of the most promising alternatives to complementary metal–oxide–semiconductor (CMOS) transistors due to its one-dimensional (1-D) band structure, low off-current capability, near-ballistic transport operation, high stability, and low power consumption. This paper presents the design of a CNFET-based ternary content-addressable memory (TCAM) cell and rigorously analyzes its performance in terms of power–delay product (PDP) and static noise margin (SNM). The effect of variations of the chiral vector on the performance of the TCAM cell is also comprehensively investigated. While selecting the chirality, SNM, PDP, and search time are considered as figures of merit. In this TCAM cell design, we apply the same chirality for all CNFETs of the same type. Extensive HSPICE simulations have been performed for computation of performance parameters using the Stanford University CNFET model. Comparison of CNFET- and CMOS-based TCAM cells has been carried out at the 16-nm technology node. The results show that the CNFET-based TCAM cell exhibits significant improvements of PDP, i.e., by 38 % during write operation and 98 % during search operation, and 53 % in SNM, compared with its CMOS counterpart. It is also observed that the best chirality for the TCAM cell design is (22, 19, 0) or (10, 19, 0) from the point of view of SNM and PDP, respectively.

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Authors and Affiliations

  1. ACS Division, Centre for Development of Advanced Computing (C-DAC), Mohali, 160071, India

    Divya Sethi & Manjit Kaur

  2. DEC Division, Centre for Development of Advanced Computing (C-DAC), Mohali, 160071, India

    Gurmohan Singh

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  1. Divya Sethi
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  2. Manjit Kaur
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Correspondence to Gurmohan Singh.

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Sethi, D., Kaur, M. & Singh, G. Design and performance analysis of a CNFET-based TCAM cell with dual-chirality selection. J Comput Electron 16, 106–114 (2017). https://doi.org/10.1007/s10825-017-0952-4

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  • DOI: https://doi.org/10.1007/s10825-017-0952-4

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