Abstract
In this paper, we propose an improved translinear based CCII configuration. Heuristic algorithm is used for optimal sizing regarding static and dynamic performances. PSPICE simulations for AMS 0.35 μm CMOS technology show that the current and voltage bandwidths are respectively 2.6 GHz and 3.9 GHz, and the parasitic resistance at port X (R X ) has a value of 18 Ω for a control current of 100 μA. The improved configuration is used as a building block into high frequency design applications: a current controlled oscillator and a tunable fully integrable band pass filter. The oscillator frequency can be tuned in the range of [290–475 MHz] by a simple variation of a DC current. The central frequency of the band pass filter can be varied in the range of [1.22–1.56 GHz] and the quality factor vary in the range [8–306] with a simple variation of a DC current.
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Samir Ben Salem was born in 1976 in Sfax, Tunisia. He received the electrical engineering degree in 2002 and Master degree on electronics and communication in 2003, both from the National School of Engineering of Sfax (ENIS), Tunisia. He is currently working toward the Ph.D. degree in Electronic at the same school. His research interest is to design RF integrated circuit for wireless communication transceivers, especially the design of active RF oscillator and filter for front end receiver.
Mourad Fakhfakh was born in Sfax-Tunisia in 1969. He received his engineering degree and his DEA (master) from the national engineering school of Sfax Tunisia in 1996 and 2002 respectively. From 1998 to 2004 he works in the Tunisian National Society of Electricity and Gas (STEG) as a chief of the technical intervention service. In September 2004, he joined the higher institute of electronics and communications (ISECS) where he is working as an assistant. Since 2002 he has been with the laboratoire d’electronique et des technologies de l’information (LETI/ENIS) where he is currently a researcher. His research interest include Switched Current techniques, symbolic analysis techniques, analog design automation, analog and mixed CAD tools, optimization techniques and tools.
Dorra Sellami Masmoudi was born in Sfax, Tunisia in 1969. She received the degree of Diplôme d’Ingénieurs from Sfax National Engineering School in 1994 and has been awarded by the president of the republic of Tunisia. Subsequently she joined I.X.L. laboratory of Microelectronics at Bordeaux and received her Ph.D. degree in 1998 in electronics system design and she has been assistant Professor at Sfax National Engineering School from 1999. At 2006, Dorra Sellami Masmoudi gets HdR degree. Her research includes low-voltage low-power design, analog and digital neural network network implementation and image processing for pattern recognition.
Mourad Loulou was born in Sfax, Tunisia in 1968. He received the degree of Diplôme d’Ingénieur de l’Ecole Nationale d’Ingénieurs de Sfax in 1993. He received his Ph.D. degree in 1998 in electronics system design from the University of Bordeaux France. He joints the electronic and information technology laboratory of Sfax ”LETI’’ since 1998 and he has been assistant Professor at Ecole nationale d’Ingénieurs de Sfax from 1999. Since 2004 he has been an associate Professor at the same institution. Actually he supervises the Analogue and Mixed Mode Design Group of LETI Laboratory. His current research interests are on analogue, mixed and RF CMOS integrated circuits design and automation.
Patrick Loumeau received the engineer degree in 1982 from the Institut National des Telecommunications in Paris, France. He received the authorization to manage research diploma in 2000. He joined the Ecole Nationale Superieure des Telecommunications of Paris in 1982. He is associate professor in the Analog and Mixed IC Design group, Communications and Electronics Department. He is in charge of research on analog and mixed IC for telecommunications. He has realized a number of research and development pr oject with industry, national research center and universities. He has co-authored more than 50 technical publications in international congress and revues.
Nouri Masmoudi was born in Sfax, Tunisia, in 1955. He received the electrical engineering degree from the Faculté des Sciences et Techniques de Sfax, Tunisia, in 1982, the DEA degree from the Institut National des Sciences Appliquées de Lyon and Universit é Claude Bernard de Lyon, France in 1982. From 1986 to 1990, he prepared his thesis at the laboratory of Power Electronics (LEP) at the Ecole Nationale d’Ingénieurs de Sfax (ENIS). He then received the ‘Thèse de 3ème Cycle’ at the Ecole Nationale d’Ingènieurs de Tunis (ENIT), Tunisia in 1990. From 1990 to 2000, he was an assistant professor at the electrical engineering department at the ENIS. Since 2000, he has been an associate professor and head of the group ‘Circuits and Systems’ of the SFAX Laboratory of Electronics and Information Technology. Currently, he is responsible for the Electronic Master Program at ENIS. His research activities have been devoted to several topics: Design, Telecommunication, Embedded systems and Information technology.
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Salem, S.B., Fakhfakh, M., Masmoudi, D.S. et al. A high performances CMOS CCII and high frequency applications. Analog Integr Circ Sig Process 49, 71–78 (2006). https://doi.org/10.1007/s10470-006-8694-4
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DOI: https://doi.org/10.1007/s10470-006-8694-4