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Strong temperature effect on X-ray photo-etching of polytetrafluoroethylene using a 10 Hz laser-plasma radiation source based on a gas puff target

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Abstract

The first results of experiments on direct photo-etching of heated PTFE using a 10 Hz X-ray source based on a laser-irradiated gas puff target are presented. X-ray radiation in the wavelength range from 6 to 20 nm was produced as a result of irradiation of a double-stream gas puff target with Nd:YAG laser pulses of energy 0.8 J and time duration 3 ns. The resulting X-ray pulses with energy of about 100–200 mJ were used to irradiate samples of PTFE to create microstructures by direct photo-etching. Strong enhancement of the photo-etching process was observed for samples heated up to 300 °C.

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Authors and Affiliations

  1. Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Street, 00-908, Warsaw, Poland

    A. Bartnik, H. Fiedorowicz, R. Jarocki, J. Kostecki, R. Rakowski & M. Szczurek

  2. Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21, Prague 8, Czech Republic

    L. Juha

Authors
  1. A. Bartnik
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  2. H. Fiedorowicz
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  3. R. Jarocki
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  4. L. Juha
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  5. J. Kostecki
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  6. R. Rakowski
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  7. M. Szczurek
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Correspondence to A. Bartnik.

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PACS

52.38.Ph; 81.65.Cf; 61.82.Pv

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Bartnik, A., Fiedorowicz, H., Jarocki, R. et al. Strong temperature effect on X-ray photo-etching of polytetrafluoroethylene using a 10 Hz laser-plasma radiation source based on a gas puff target. Appl. Phys. B 82, 529–532 (2006). https://doi.org/10.1007/s00340-005-2126-5

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  • DOI: https://doi.org/10.1007/s00340-005-2126-5

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